公开(公告)号：EP2802046A1

公开(公告)日：2014-11-12

申请号：EP13167055.6

申请日：2013-05-08

申请人： Camlin Technologies (Switzerland) Limited

发明人： Felder, Ferdinand ,  Fill, Matthias ,  Zogg, Hans ,  Debernardi, Pierluigi

IPC分类号： H01S5/183 ,  H01S5/32 ,  H01S5/04 ,  H01S5/14 ,  H01S5/42

CPC分类号： H01S5/18308 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18344 ,  H01S5/18397 ,  H01S5/3222 ,  H01S5/423 ,  H01S5/426 ,  H01S2301/166 ,  H01S2301/176

摘要： The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighbouring region (25) that at least partly surrounds said mesa (24) has a second refractive index ( n 2 ). At least part of said mesa (24) has a first refractive index ( n 1 ) and a part of the neighbouring region (25) transversally adjacent to said part of the mesa (24) has second refractive index ( n 2 ). Said first refractive index ( n 1 ) is higher than said second refractive index ( n 2 ) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.

摘要翻译： 本发明涉及一种用于垂直发射激光器件的有源增益层堆叠（21），所述有源增益层堆叠（21）包括半导体材料，其中所述半导体材料被构造成使得其形成至少一个台面（24） 在垂直方向上延伸。 至少部分地围绕所述台面（24）的横向相邻区域（25）具有第二折射率（n 2）。 所述台面（24）的至少一部分具有第一折射率（n 1），并且与台面（24）的所述部分横向相邻的相邻区域（25）的一部分具有第二折射率（n 2）。 所述第一折射率（n 1）高于所述第二折射率（n 2），并且所述台面（24）的横向方向上的直径被选择为使得所述有源增益层叠层（21）中的横向约束因子增加 。 本发明还涉及一种包括这种堆叠的激光装置，还涉及这种堆叠的操作方法，以及制造这种叠层的方法。 VECSEL包括在下反射镜上生长的IV-VI增益材料和外腔镜。 多个台面（22）可以在单个基板（23）上生长。 防引导通过周围材料（25）的较低折射率来改善单个横向模式操作来防止。