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公开(公告)号：EP2865056A1
公开(公告)日：2015-04-29
申请号：EP13765444.8
申请日：2013-06-26
CPC分类号： H01S5/026 , H01S5/005 , H01S5/02252 , H01S5/1835 , H01S5/4012 , H01S5/423 , H01S5/426
摘要： The present invention relates to a laser module comprising several sub- modules (1) arranged side by side along a first axis (10) on a common carrier. Each of said sub-modules (1) comprises a laser area (8) formed of one or several arrays of semiconductor lasers arranged on a surface of the sub-module (1). Laser radiation emitted by each of said semiconductor lasers (2) forms an intensity distribution in a working plane facing said surface of the sub-modules (1). The sub-modules (1) and laser areas (8) are designed and arranged such that the laser areas (8) of adjacent sub-modules (1) partly overlap in a direction perpendicular to said first axis (10). With such a laser module a thin laser line focus can be generated having a homogeneous intensity distribution along the length of the laser line independent on the distance between the module and the working plane. The individual semiconductor lasers (2) may be VCSEL with a rectangularly shaped emission.
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公开(公告)号：EP1173908B1
公开(公告)日：2003-10-15
申请号：EP00957231.4
申请日：2000-04-25
IPC分类号： H01S5/42
CPC分类号： H01S5/423 , H01S5/0217 , H01S5/041 , H01S5/18358 , H01S5/1838 , H01S5/4087 , H01S5/426
摘要： A semiconductor device includes an array of long-wavelength VCSELs pumped by a short-wavelength optical pump. The array of long-wavelength VCSELs includes a series of semiconductor recesses, where each semiconductor recess is between two layers of a VCSEL, substantially overlapping the transverse model profile of the VCSEL under operation.
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公开(公告)号：EP3220494A4
公开(公告)日：2018-07-11
申请号：EP14905924
申请日：2014-12-07
发明人： LI YANG
CPC分类号： H01S5/18361 , H01S5/005 , H01S5/02252 , H01S5/0228 , H01S5/02469 , H01S5/4012 , H01S5/4043 , H01S5/423 , H01S5/426
摘要： Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved. The high-power semiconductor laser based on VCSEL has a wide application prospect in the laser medicine and industrial laser processing fields.
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4.发明公开Light guiding for vertical external cavity surface emitting laser 审中-公开LichtführungfürVertikalresonator-Oberflächenemissionslaser
公开(公告)号：EP2802046A1
公开(公告)日：2014-11-12
申请号：EP13167055.6
申请日：2013-05-08
CPC分类号： H01S5/18308 , H01S5/041 , H01S5/14 , H01S5/18344 , H01S5/18397 , H01S5/3222 , H01S5/423 , H01S5/426 , H01S2301/166 , H01S2301/176
摘要： The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighbouring region (25) that at least partly surrounds said mesa (24) has a second refractive index ( n 2 ). At least part of said mesa (24) has a first refractive index ( n 1 ) and a part of the neighbouring region (25) transversally adjacent to said part of the mesa (24) has second refractive index ( n 2 ). Said first refractive index ( n 1 ) is higher than said second refractive index ( n 2 ) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.
摘要翻译： 本发明涉及一种用于垂直发射激光器件的有源增益层堆叠（21），所述有源增益层堆叠（21）包括半导体材料，其中所述半导体材料被构造成使得其形成至少一个台面（24） 在垂直方向上延伸。 至少部分地围绕所述台面（24）的横向相邻区域（25）具有第二折射率（n 2）。 所述台面（24）的至少一部分具有第一折射率（n 1），并且与台面（24）的所述部分横向相邻的相邻区域（25）的一部分具有第二折射率（n 2）。 所述第一折射率（n 1）高于所述第二折射率（n 2），并且所述台面（24）的横向方向上的直径被选择为使得所述有源增益层叠层（21）中的横向约束因子增加 。 本发明还涉及一种包括这种堆叠的激光装置，还涉及这种堆叠的操作方法，以及制造这种叠层的方法。 VECSEL包括在下反射镜上生长的IV-VI增益材料和外腔镜。 多个台面（22）可以在单个基板（23）上生长。 防引导通过周围材料（25）的较低折射率来改善单个横向模式操作来防止。
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公开(公告)号：EP1399994B1
公开(公告)日：2005-07-27
申请号：EP02747173.9
申请日：2002-05-23
发明人： MICHLER, Peter
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/041 , H01S5/0614 , H01S5/1833 , H01S5/3412 , H01S5/426
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公开(公告)号：EP1037341B1
公开(公告)日：2003-05-02
申请号：EP00102463.7
申请日：2000-02-04
发明人： Tan, Michael R. T. , Babic, Dubravko I. , Corzine, Scott W. , Ranganath, Tirmula R. , Wang, Shih-Yuan , Bi, Wayne
CPC分类号： H01S5/426 , H01S5/0215 , H01S5/0216 , H01S5/041 , H01S5/18311 , H01S5/18369
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公开(公告)号：EP2094460B1
公开(公告)日：2011-07-13
申请号：EP07859406.6
申请日：2007-12-17
CPC分类号： B29B13/024 , B29C49/06 , B29C49/68 , B29C2035/0822 , B29C2035/0838 , B29K2067/00 , B29K2105/258 , H01S5/18388 , H01S5/426
摘要： A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a mirror arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21', 21'') and a second mirror surface (22, 22', 22'') arranged at opposite sides, so that the objects (0) may be transported between the mirror surfaces (21, 22, 21', 22', 21'', 22'') along the production line and a radiation device (30) comprising a number of lasers for generating light (L). The radiation device (30) and the mirror arrangement (201, 202, 203, 204, 205, 206) are constructed such that the main direction (R) of light (L) that enters the mirror arrangement (201, 202, 203, 204, 205, 206) is directed towards the first mirror surface (21, 21', 21'') at an angle to the production line (P), and the light (L) subsequently undergoes multiple reflections between the mirror surfaces (21, 22, 21', 22', 21'', 22'') so that a series of multiple reflections of the light (L) travels in the transport direction (OT) along at least a section of the mirror surface (21, 22, 21', 22', 21'', 22'') or travels against the transport direction (OT) along at least a section of the mirror surface (21, 22, 21', 22', 21'', 22'') and heats the objects (0) being transported between the mirror surfaces (21, 22, 21', 22', 21'', 22'').
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8.发明公开Stacked three dimensional photonic crystal, light emitting device, and image display apparatus 有权三维地层叠光子晶体，在所述光源和图像形成装置
公开(公告)号：EP1587186A3
公开(公告)日：2005-11-30
申请号：EP05252263.8
申请日：2005-04-11
发明人： Hoshi, Hikaru , Takagi, Akinari
CPC分类号： H01S5/426 , H01S5/105 , H01S5/18397 , H01S5/3086 , H01S5/327 , H01S5/36 , H01S5/4093 , H04N9/30 , H04N9/3129
摘要： Provided is a light emitting structure which can emit light having a plurality of wavelength distributions from a single light emitting structure, can be integrated at high density, and can control a radiation mode pattern of radiation light and polarization thereof. A stacked three-dimensional photonic crystal is composed of a plurality of three-dimensional photonic crystals having photonic band gaps different from one another, which are stacked. Each of the plurality of three-dimensional photonic crystals includes a resonator in which a point defect is formed.
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9.发明公开Stacked three dimensional photonic crystal, light emitting device, and image display apparatus 有权堆叠的三维光子晶体，发光器件和图像显示装置
公开(公告)号：EP1587186A2
公开(公告)日：2005-10-19
申请号：EP05252263.8
申请日：2005-04-11
发明人： Hoshi, Hikaru , Takagi, Akinari
CPC分类号： H01S5/426 , H01S5/105 , H01S5/18397 , H01S5/3086 , H01S5/327 , H01S5/36 , H01S5/4093 , H04N9/30 , H04N9/3129
摘要： Provided is a light emitting structure which can emit light having a plurality of wavelength distributions from a single light emitting structure, can be integrated at high density, and can control a radiation mode pattern of radiation light and polarization thereof. A stacked three-dimensional photonic crystal is composed of a plurality of three-dimensional photonic crystals having photonic band gaps different from one another, which are stacked. Each of the plurality of three-dimensional photonic crystals includes a resonator in which a point defect is formed.
摘要翻译： 提供一种发光结构，其能够从单个发光结构发射具有多个波长分布的光，可以高密度地集成，并且可以控制辐射光的辐射模式和其偏振。 堆叠的三维光子晶体由多个彼此不同的具有彼此不同的光子带隙的三维光子晶体组成，所述三维光子晶体被堆叠。 多个三维光子晶体中的每一个包括形成点缺陷的谐振器。
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公开(公告)号：EP1399994A1
公开(公告)日：2004-03-24
申请号：EP02747173.9
申请日：2002-05-23
发明人： MICHLER, Peter
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/041 , H01S5/0614 , H01S5/1833 , H01S5/3412 , H01S5/426
摘要： A second resonator (103) is arranged in an emissions device (114) of a radiation-emitting first resonator (102) in such a way that a quantum point (121) contained in the second resonator (103) is energetically excited by the radiation emitted by the first resonator (102). The excitonic ground state of the quantum point is brought into resonance with a predetermined resonator mode level of the second resonator (103) with the aid of a control unit (116).
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