Abstract:
An illumination system of a microlithographic projection exposure apparatus is configured to illuminate a mask (16) with light pulses and comprises a beam deflection array (46) of reflective or transparent beam deflection elements (M ij ). Each beam deflection element (M ij ) is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The illumination system further comprises a system pupil surface (70) in which an irradiance distribution is produced by the beam deflection array. A control unit (50) is provided that is configured to control the beam deflection elements such that the illuminated area associated with an irradiance distribution produced in the system pupil surface (70) changes between two consecutive light pulses (LP n , LP n+1 ) of an exposure process during which the mask (16) is imaged on a light sensitive surface (22).
Abstract:
An illumination system of a microlithographic projection exposure apparatus is configured to illuminate a mask (16) with light pulses and comprises a beam deflection array (46) of reflective or transparent beam deflection elements (M ij ). Each beam deflection element (M ij ) is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The illumination system further comprises a system pupil surface (70) in which an irradiance distribution is produced by the beam deflection array. A control unit (50) is provided that is configured to control the beam deflection elements such that the illuminated area associated with an irradiance distribution produced in the system pupil surface (70) changes between two consecutive light pulses (LP n , LP n+1 ) of an exposure process during which the mask (16) is imaged on a light sensitive surface (22).