Abstract:
An illumination optical apparatus is able to quickly perform switching of illumination conditions between illumination in a first region and illumination in a second region. The illumination optical apparatus of the present invention to illuminate an illumination target surface (M) on the basis of light from a light source (1) comprises: a path switching member (3, 4) arranged in an optical path between the light source and the illumination target surface and switching an optical path of an exiting beam between a first optical path and a second optical path; a path combining member (5) combining the first optical path and the second optical path; a first pupil distribution forming member (12, 13, 15, 16, 6) arranged in the first optical path and forming a predetermined light intensity distribution on an illumination pupil; and a second pupil distribution forming member (22, 23, 25, 26, 6) arranged in the second optical path and forming a predetermined light intensity distribution on the illumination pupil.
Abstract:
An illumination system of a microlithographic projection exposure apparatus is configured to illuminate a mask (16) with light pulses and comprises a beam deflection array (46) of reflective or transparent beam deflection elements (M ij ). Each beam deflection element (M ij ) is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The illumination system further comprises a system pupil surface (70) in which an irradiance distribution is produced by the beam deflection array. A control unit (50) is provided that is configured to control the beam deflection elements such that the illuminated area associated with an irradiance distribution produced in the system pupil surface (70) changes between two consecutive light pulses (LP n , LP n+1 ) of an exposure process during which the mask (16) is imaged on a light sensitive surface (22).
Abstract:
Eine Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage (1) dient zur Ausleuchtung einer Objektoberfläche (19) mit Beleuchtungslicht (3, 3') einer Lichtquelle (2, 2'). Zur Einstellung mindestens zweier Beleuchtungssettings in einer Pupillenebene (12) der Beleuchtungsoptik dienen mindestens zwei voneinander separate optische Baugruppen (28, 29). Im Lichtweg vor diesen ist ein Auskoppelelement (9) angeordnet, welches wahlweise das Beleuchtungslicht (3, 3') der ersten (28) und/oder der zweiten (29) optischen Baugruppe zuführt. Im Lichtweg nach den beiden optischen Baugruppen (28, 29) ist ein Einkoppelelement (35) angeordnet, das das Beleuchtungslicht (3, 3'), welches die erste (28) und/oder die zweite (29) optische Baugruppe passiert hat, dem Beleuchtungsfeld zuführt. Es resultieren eine Beleuchtungsoptik und ein zusätzlich die Lichtquelle aufweisendes Beleuchtungssystem, das einen schnellen Wechsel zwischen Beleuchtungssettings ermöglicht.
Abstract:
An illumination optical system (IU) of a projection exposure apparatus for projecting and exposing a pattern of a reticle (R) onto a wafer (W) comprises a secondary relay optical system (22) for forming a plane (62) optically conjugate with a reticle surface between an exposure light source (10) and the reticle (R), and an optical path combining mirror (21) for combining exposure light beams (IL1, IL2) from the exposure light source (10) so that they illuminate the reticle surface closely to each other there, wherein the optical path combining mirror (21) includes reflecting surfaces (21a, 21b) for respectively reflecting the exposure light beams (IL1, IL2), and wherein a ridge line (21c) at the boundary between the reflecting surfaces (21a, 21b) is arranged on or near the plane (62).
Abstract:
Provided is a radiation distribution system (7;15;20;30) for distributing the radiation from an illumination system (IL) to two or more patterning means (PPM;8), each for patterning beams of radiation (PB;6), which are subsequently projected onto a substrate (W).
Abstract:
A projection exposure mask with a small size and low cost for exposing a member to form a continuous pattern and a discontinuous pattern thereon is disclosed. The projection exposure mask has a first mask pattern for exposing the member to form the continuous pattern thereon and a second mask pattern for exposing the member to form the discontinuous pattern thereon. One of the first and second mask patterns is a reflecting type mask pattern, and the other mask pattern is a transmitting mask pattern.
Abstract:
A system for creating a pattern on a workpiece sensitive to light radiation, such as a photomask, a display panel or a microoptical device, comprising a source for emitting light pulses in the wavelength range from EUV to IR, a spatial light modulator (SLM) having at least one modulating element (pixel), adapted to being illuminated by at least one emitted light pulse and a projection system creating an image of the modulator on the workpiece. Further, the system comprises a fast pulse detector to detect an output pulse energy of each individual pulse and produce for each said individual pulse, a signal corresponding to the output pulse energy of said individual pulse, a switch having response times in the nanosecond or sub-nanosecond range for blocking portions of each pulse, said switch being configured to be controlled by said signals from said last pulse detector, so as to control the energy output of each individual pulse to approximately a desired energy output based on the output pulse energy measurement of said individual pulse.
Abstract:
An exposure apparatus EX includes a light source unit 1 which emits an exposure light beam EL; and an illumination system IL which includes a splitting optical system 13 splitting the exposure light beam EL emitted from the light source unit 1 into a first exposure light beam EL1 and a second exposure light beam EL2, and which illuminates a first pattern PA1 with the first exposure light beam EL1 and illuminates a second pattern PA2 with the second exposure light beam EL2; wherein a predetermined area on a substrate P is multiply exposed by radiating the first exposure light beam EL1 from the first pattern PA1 and the second exposure light beam EL2 from the second pattern PA2 onto the predetermined area on the substrate P.
Abstract:
A lithographic apparatus and method for simultaneously exposing two patterning devices onto a substrate is disclosed. In an embodiment, a lithographic apparatus includes a plurality of illumination systems for receiving and conditioning a pulsed radiation beam, a beam director arranged between a source of the pulsed radiation and the illumination systems for alternately directing pulses of the radiation beam to the respective illumination systems, a support table for holding a plurality of patterning devices, each of the patterning devices being capable of imparting a respective conditioned radiation beam with a pattern in its cross-section to form a plurality of patterned radiation beams, and a projection system configured to project each of the plurality of patterned radiation beams coincidentally onto a target portion of a substrate. In an embodiment, the substrate is covered with a phase change material.