公开(公告)号：EP1883102B1

公开(公告)日：2013-10-02

申请号：EP06255833.3

申请日：2006-11-15

申请人： Central Research Institute of Electric Power Industry

发明人： Tsuchida, Hidekazu Materials Science Research Lab. ,  Storasta, Liutauras Materials Science Res. Lab.

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L29/24 ,  H01L21/322 ,  H01L29/732 ,  H01L29/74 ,  H01L29/861 ,  H01L29/739

CPC分类号： H01L21/0445 ,  C30B29/36 ,  C30B31/22 ,  H01L21/322 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/7325 ,  H01L29/7395

公开(公告)号：EP1883102A3

公开(公告)日：2009-04-22

申请号：EP06255833.3

申请日：2006-11-15

申请人： Central Research Institute of Electric Power Industry

发明人： Tsuchida, Hidekazu Materials Science Research Lab. ,  Storasta, Liutauras Materials Science Res. Lab.

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L29/24 ,  H01L21/322 ,  H01L29/732 ,  H01L29/74 ,  H01L29/861 ,  H01L29/739

CPC分类号： H01L21/0445 ,  C30B29/36 ,  C30B31/22 ,  H01L21/322 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/7325 ,  H01L29/7395

摘要： It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method.
A method for improving the quality of an SiC layer by eliminating or reducing some carrier trapping centers comprising the steps of:
(a) carrying out ion implantation of carbon atoms (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and
(b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.

公开(公告)号：EP1883102A2

公开(公告)日：2008-01-30

申请号：EP06255833.3

申请日：2006-11-15

申请人： Central Research Institute of Electric Power Industry

发明人： Tsuchida, Hidekazu Materials Science Research Lab. ,  Storasta, Liutauras Materials Science Res. Lab.

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L29/24 ,  H01L21/322 ,  H01L29/732 ,  H01L29/74 ,  H01L29/861 ,  H01L29/739

CPC分类号： H01L21/0445 ,  C30B29/36 ,  C30B31/22 ,  H01L21/322 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/7325 ,  H01L29/7395

摘要： It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method.
A method for improving the quality of an SiC layer by eliminating or reducing some carrier trapping centers comprising the steps of:
(a) carrying out ion implantation of carbon atoms (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and
(b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.

摘要翻译： 本发明的目的是提供一种通过有效地减少或消除由高温退火引起的载流子俘获中心和通过该方法制造的SiC半导体器件来提高SiC层的质量的方法。 一种通过消除或减少一些载流子俘获中心来改善SiC层的质量的方法，包括以下步骤：（a）将碳原子（C），硅原子，氢原子或氦原子离子注入浅表面 （E）的层（A），以将多余的碳间隙引入注入表面层，（b）加热碳填隙层（C）的层从注入表面层（A）扩散出来， 进入体层（E）并使得体层中的电活性点缺陷不活跃。 在上述步骤之后，可以蚀刻或机械去除表面层（A）。 根据本发明的半导体器件通过该方法制造。