摘要:
The invention relates to a method for determining the maximum open circuit voltage (Vco) and the power that can be output by a photoconverter material subject to a measurement light intensity 10, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength (λ2) substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage (Vco) of the photoconverter material with the measurement light intensity 10 by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterised in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.
摘要:
The invention relates to a method for chemically passivating a surface of a product made of a III-V semiconductor, in which: a) a P(N) polymer film (6) is formed by deposition in a solvent comprising liquid ammonia. The film is formed by deposition in the solvent without electrochemical assistance, in the presence of a phosphorus-comprising oxidizing additive generating electrical charge carriers on said surface.