公开(公告)号：EP4287188A1

公开(公告)日：2023-12-06

申请号：EP22857334.1

申请日：2022-04-29

Applicant: Changxin Memory Technologies, Inc.

Inventor： FAN, Xian ,  GU, Yinchuan ,  CAO, Xianlei ,  YANG, Yu ,  SU, HSIN-CHENG

IPC: G11C11/406 ,  G11C11/409

Abstract: A refresh address counting circuit, a refresh address counting method, a refresh address read-write circuit, and an electronic device, which relate to the technical field of integrated circuits. The refresh address counting circuit comprises: a self-oscillation clock generation module, used for generating, within each refresh cycle, a self-oscillation clock signal based on an array activation signal after a refresh signal is obtained; a self-oscillation mask module, used for generating a self-oscillation mask signal under a preset refresh command; and a refresh address counting module, used for counting a refresh address based on the self-oscillation clock signal and the self-oscillation mask signal and outputting a self-oscillation refresh address. Provided is a refresh address counting circuit suitable for DDR5.