利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.012 秒)

    HIGH-PURITY CRYSTALLINE SILICON, HIGH-PURITY SILICON TETRACHLORIDE, AND PROCESSES FOR PRODUCING SAME
    1.
    发明公开
    HIGH-PURITY CRYSTALLINE SILICON, HIGH-PURITY SILICON TETRACHLORIDE, AND PROCESSES FOR PRODUCING SAME 审中-公开
    HOCHREINES KRISTALLINES SILICIUM，HOCHREINES SILICIUM-TETRACHLORID UND VERFAHREN ZU IHRER HERSTELLUNG

    公开(公告)号：EP2322477A1

    公开(公告)日：2011-05-18

    申请号：EP09813040.4

    申请日：2009-09-04

    申请人： Chisso Corporation ,  JX Nippon Mining & Metals Corporation ,  Toho Titanium CO., LTD.

    发明人： HAYASHIDA, Satoshi ,  KATO, Wataru

    IPC分类号： C01B33/033 ,  C30B29/06

    CPC分类号： C01B33/033 ,  C01B33/1071 ,  C30B29/06

    摘要： An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200°C, whereby crude crystalline silicon is formed at a chip part of a silicon tetrachloride gas-supplying nozzle, and the crude crystalline silicon is grown downward from the chip part of the silicon tetrachloride gas-supplying nozzle; the grown crude crystalline silicon is discharged to an outside of the reactor, and the discharged crude crystalline silicon is subjected to acid treatment.

    摘要翻译： 本发明的目的是提供更便宜的高纯度晶体硅，其不仅可以满足用于太阳能电池的硅原料所需的质量，而且还可以满足硅所需的最新的一部分质量 半导体及其制造方法相同，并提供用于生产高纯度晶体硅的高纯度四氯化硅及其制备方法。 本发明的高纯度结晶硅的硼含量为0.015ppmw以下，锌含量为50〜1000ppbw。 根据本发明的高纯度晶体硅的制造方法的特征在于，将四氯化硅气体和锌气体供给至立式反应器，使其在800〜1200℃下反应，由此在芯片上形成粗晶体硅 一部分四氯化硅气体供给喷嘴，粗晶硅从四氯化硅气体供给喷嘴的芯片部分向下生长; 将生长的粗结晶硅排出到反应器外部，并将排出的粗结晶硅进行酸处理。

    METHOD FOR THE PURIFICATION OF SILICON TETRACHLORIDE
    2.
    发明公开
    METHOD FOR THE PURIFICATION OF SILICON TETRACHLORIDE 有权
    纯化四氯化硅的方法

    公开(公告)号：EP2322478A1

    公开(公告)日：2011-05-18

    申请号：EP09808275.3

    申请日：2009-08-19

    申请人： Chisso Corporation ,  JX Nippon Mining & Metals Corporation ,  Toho Titanium CO., LTD.

    发明人： HAYASHIDA, Satoshi ,  SEMOTO, Harumichi

    IPC分类号： C01B33/107

    CPC分类号： C01B33/10778 ,  C01B33/10784

    摘要： An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption.
    The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450°C and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.

    摘要翻译： 本发明的一个目的是提供一种净化四氯化硅的方法，其解决了通过蒸馏或吸附分离和除去有机氯硅烷的问题。 四氯化硅的精制方法包括以下步骤：（1）使包含四氯化硅气体和含氧气体的混合气体与控制至200-450℃的温度的催化剂层接触，并且该方法包括 选自由活性炭和负载金属的活性炭组成的组中的至少一种，和（2）在接触后冷却混合气体以分离和回收液体四氯化硅。