公开(公告)号：EP2577729A1

公开(公告)日：2013-04-10

申请号：EP11723935.0

申请日：2011-05-31

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique ,  Institut Polytechnique de Grenoble

发明人： AVENAS, Yvan ,  CREBIER, Jean-Christophe ,  WIDIEZ, Julie ,  CLAVELIER, Laurent ,  VLADIMIROVA, Kremena

IPC分类号： H01L25/07 ,  H01L23/473

CPC分类号： H01L23/46 ,  H01L23/473 ,  H01L25/074 ,  H01L33/648 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to an electronic chip, comprising: a semiconductor substrate (6) having an active area (8) formed by at least one P doped region and at least one N doped region which form one or more P-N junctions through which most of the useful current flows when said electronic chip is in a conductive state, and at least one channel (44) through which a heat transport coolant can flow, the channel(s) passing through at least said P or N doped region of the active area. Each channel (44) is rectilinear and passes through the substrate (6) in a direction which is collinear with a direction F to the nearest ± 45°, where the direction F is perpendicular to the plane of the substrate.

公开(公告)号：EP2577729B1

公开(公告)日：2014-03-12

申请号：EP11723935.0

申请日：2011-05-31

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique ,  Institut Polytechnique de Grenoble

发明人： AVENAS, Yvan ,  CREBIER, Jean-Christophe ,  WIDIEZ, Julie ,  CLAVELIER, Laurent ,  VLADIMIROVA, Kremena

IPC分类号： H01L25/07 ,  H01L23/473 ,  H01L33/64

CPC分类号： H01L23/46 ,  H01L23/473 ,  H01L25/074 ,  H01L33/648 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP3847694A2

公开(公告)日：2021-07-14

申请号：EP19774162.2

申请日：2019-09-02

申请人： Commissariat à l'énergie atomique et aux énergies alternatives ,  Centre National de la Recherche Scientifique

发明人： VLADIMIROVA, Kremena ,  CREBIER, Jean-Christophe ,  WIDIEZ, Julie

IPC分类号： H01L23/373 ,  H01L25/07 ,  H01L25/16 ,  H01L21/60