摘要:
This radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. Said device comprises: a first magnetic layer, known as a "trapped layer" (2), the magnetization of which is of a substantially fixed direction; a second magnetic layer known as a "free layer" (1); a non-magnetic layer (3), known as an "intermediate layer" or spacer, interposed between the free layer (1) and the trapped layer (2). The oscillator also comprises means capable of making an electron current flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. At least the free layer (1) is devoid of any material at its centre. The electron current density flowing through the stack of said layers is capable of generating a magnetization in said free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in said free layer around the central zone devoid of material.