公开(公告)号：EP3210246B1

公开(公告)日：2018-12-12

申请号：EP15781110.0

申请日：2015-10-15

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique ,  Université Grenoble Alpes

发明人： DIENY, Bernard ,  DARNON, Maxime ,  NAVARRO, Gabriele ,  JOUBERT, Olivier

IPC分类号： H01L45/00 ,  H01L27/22 ,  H01L27/24 ,  C23C14/34 ,  H01L21/4763

CPC分类号： H01L21/4763 ,  C23C14/3407 ,  H01L27/22 ,  H01L27/222 ,  H01L27/24 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/12 ,  H01L45/00 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1691

公开(公告)号：EP3409652A1

公开(公告)日：2018-12-05

申请号：EP17382320.4

申请日：2017-05-31

申请人： Consejo Superior de Investigaciones Científicas (CSIC)

发明人： ALGUERÓ GIMÉNEZ, Miguel ,  AMORÍN GONZÁLEZ, Harvey ,  CASTRO LOZANO, Alicia

IPC分类号： C04B35/462 ,  C04B35/472 ,  C04B35/626 ,  C04B35/64 ,  H01L41/43 ,  H01L41/187 ,  H01G4/12 ,  G01R33/09 ,  H01L43/08

CPC分类号： C04B35/462 ,  C04B35/472 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/64 ,  C04B2235/3262 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/85 ,  G01R33/09 ,  H01G4/12 ,  H01G4/1218 ,  H01L41/187 ,  H01L41/43 ,  H01L43/08

摘要： The invention relates to a fully dense and ultrafine grained high temperature piezoelectric BiScO 3 -PbTiO 3 ceramic material of formula Bi 1-x+2y Pb x-3y Sc 1-x Ti x O 3 , wherein x ranges from 0.64 to 0.68 and y ranges from 0.01 to 0,025, which includes a point defect engineering for high voltage response and an optimized microstructure for enhanced fracture strength. Furthermore, the invention refers to a process for obtaining said piezoelectric ceramic material by hot pressing of nanocrystalline powders derived by mechanosynthesis from a stoichiometric mixture of precursors and to the use of said piezoelectric ceramic material as part of a sensing device. Moreover, the invention relates a magnetoelectric composite comprising said piezoelectric ceramic material and a magnetostrictive material, the process for obtaining said magnetoelectric composite and its use as part of a magnetic sensing device.

公开(公告)号：EP3199965B1

公开(公告)日：2018-11-14

申请号：EP15843848.1

申请日：2015-09-25

申请人： Asahi Kasei Microdevices Corporation

发明人： SHIKAMA Takahisa ,  FUJIMOTO Yoshinobu

IPC分类号： G01R33/09 ,  G01R33/02 ,  H01L43/08

CPC分类号： G01R33/02 ,  G01R33/09 ,  H01L43/08

摘要： A magnetic sensor having a wide magnetic field range is provided. A magnetic sensor is providing. The magnetic sensor includes: a substrate; a magnetic converging part that is arranged on the substrate or in the substrate; a plurality of magnetic detecting parts; and a calculating part, wherein the magnetic converging part converts, at each magnetic detecting part among the plurality of magnetic detecting parts, an external magnetic field oriented in a direction different from the magnetically sensitive-axis direction to a magnetic field oriented in the magnetically sensitive-axis direction, the each magnetic detecting part includes a plurality of magneto-resistance elements arrayed parallel with the plane of the substrate, each magneto-resistance element among the plurality of magneto-resistance elements includes a laminated-layer structure formed of: a free layer in which a magnetization direction is changed by the external magnetic field; a pinned layer with fixed magnetization; and a spacer layer provided between the free layer and the pinned layer, a longitudinal direction of the free layer of one magneto-resistance element included in the plurality of magneto-resistance elements coincides with a longitudinal direction of the free layer of at least one magneto-resistance element adjacent to the one magneto-resistance element, and the at least one magneto-resistance element adjacent to the one magneto-resistance element is arrayed in the longitudinal direction of the free layer of the one magneto-resistance element.

公开(公告)号：EP3143649B1

公开(公告)日：2018-10-31

申请号：EP15703417.4

申请日：2015-01-29

申请人： Headway Technologies, Inc.

发明人： LIU, Huanlong ,  ZHU, Jian ,  PI, Keyu ,  TONG, Ru-Ying

IPC分类号： H01L43/12 ,  G01R33/09 ,  H01F41/30 ,  G11C11/16 ,  G11B5/39 ,  H01L43/08

CPC分类号： H01L43/12 ,  G01R33/096 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/161 ,  H01F41/307 ,  H01L43/08

摘要： A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10−5 torr. A bottom portion of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.

公开(公告)号：EP3385740A1

公开(公告)日：2018-10-10

申请号：EP16870824.6

申请日：2016-12-02

申请人： Alps Electric Co., Ltd.

发明人： UMETSU, Eiji

IPC分类号： G01R33/09 ,  G01R33/02 ,  H01L43/08

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/02 ,  G01R33/09 ,  H01L43/08 ,  H01L43/12

摘要： [Object] To provide a magnetic detection device that detects magnetic fields in X, Y, and Z directions by forming magnetoresistive elements on inclined side surfaces of recesses formed in a substrate, and a method for manufacturing the magnetic detection device.
[Solution] A Z detection unit 10 includes magnetoresistive elements 40 (R1, R2, R3, and R4) provided on inclined side surfaces 13 and 14 of Z detection recesses 11A and 11B. An X detection unit 20 includes magnetoresistive elements 40 (R5, R6, R7, and R8) provided on inclined side surfaces 23 and 24 of X detection recesses 21A and 21B. A Y detection unit 30 includes magnetoresistive elements 40 (R9, R10, R11, and R12) provided on inclined side surfaces 33 and 34 of Y detection recesses 31A and 31B. Directions of fixed magnetization (P) of fixed magnetic layers included in the magnetoresistive elements 40 are set to directions shown by arrows with solid lines.

公开(公告)号：EP2901454B1

公开(公告)日：2018-10-10

申请号：EP13840358.9

申请日：2013-06-10

申请人： Intel Corporation

发明人： KARPOV, Elijah V. ,  DOYLE, Brian S. ,  OGUZ, Kaan ,  SURI, Satyarth ,  CHAU, Robert S. ,  KUO, Charles C. ,  DOCZY, Mark L. ,  KENCKE, David L.

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

公开(公告)号：EP3029792B1

公开(公告)日：2018-09-26

申请号：EP14832951.9

申请日：2014-07-25

申请人： Multidimension Technology Co., Ltd.

发明人： ZHOU, Zhimin ,  DEAK, James Geza

IPC分类号： H01L43/08 ,  H02H9/02

CPC分类号： H01C7/13 ,  G01R33/091 ,  G01R33/098 ,  H01L43/08 ,  H02H9/02

摘要： A magnetoresistive current limiter, comprising a substrate (1), a magnetoresistive sensor layer (2), a first insulating layer, a coil (4), a second insulating layer, a magnetic shield layer (6), and an input electrode (8) and output electrode (7). The coil (4) is located between the magnetic shield layer (6) and the magnetoresistive sensor layer (2); The first and second insulating layers are isolated from the magnetoresistive sensor layer (2) and the coil (4), and from the coil (4) and the magnetic shield layer (6), respectively; the magnetoresistive sensor layer (2) and the coil (4) are connected in series, and are connected to the input electrode (8) and the output electrode (7). The magnetoresistive sensor layer (2) comprises N rows of array-type magnetic tunnel junction lines; the coil (4) comprises 2*N+M (N>1, M=-1 or 3) conductive lines in series or N+M (N>1, M=0 or 2) conductive lines in parallel; current flows in the same direction into the conductive lines located above or below the tunnel junction lines and produces, at the magnetic tunnel junction lines, a uniform magnetic field. The magnetic tunnel junction of the magnetically sensitive axis is perpendicular to the magnetic tunnel junction lines, and the magnetoresistive sensor layer (2) has the feature of a monotonic or axisymmetric linear rise in resistance to the magnetic field. The magnetoresistive current limiter has the features of rapid response, continuous operation, and ability to increase or decrease current.

公开(公告)号：EP2583278B1

公开(公告)日：2018-09-26

申请号：EP11796130.0

申请日：2011-05-18

申请人： International Business Machines Corp.

发明人： WORLEDGE, Daniel, C.

IPC分类号： G11C11/16 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  B82Y25/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/10

摘要： A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.

公开(公告)号：EP3125319B1

公开(公告)日：2018-09-12

申请号：EP15768683.3

申请日：2015-03-11

申请人： Alps Electric Co., Ltd.

发明人： IDE, Yosuke ,  SAITO, Masamichi

IPC分类号： H01L43/08 ,  G01R15/20 ,  G01R33/09 ,  H01L43/12

CPC分类号： G01R33/091 ,  G01R3/00 ,  G01R15/20 ,  G01R15/205 ,  G01R19/0092 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A magnetic sensor (1) is provided which includes: a magnetoresistive effect element (11) in which a fixed magnetic layer (21) and a free magnetic layer (23) are laminated to each other with a nonmagnetic material layer (23) provided therebetween; at a side of the free magnetic layer opposite to the side thereof facing the nonmagnetic material layer, an antiferromagnetic layer (24) which generates an exchange coupling bias with the free magnetic layer and which aligns the magnetization direction of the free magnetic layer in a predetermined direction in a magnetization changeable state; and at a side of the antiferromagnetic layer opposite to the side thereof facing the free magnetic layer, a ferromagnetic layer (25) which generates an exchange coupling bias with the antiferromagnetic layer and which aligns the magnetization direction thereof in a predetermined direction in a magnetization changeable state. The magnetization direction based on the exchange coupling bias generated in the free magnetic layer is the same direction as the magnetization direction based on the exchange coupling bias generated in the ferromagnetic layer, and the ferromagnetic layer is able to impart a reflux magnetic field having a component in a direction along a sensitivity axis (D2) to the free magnetic layer.

公开(公告)号：EP2676274B1

公开(公告)日：2018-08-15

申请号：EP12713807.1

申请日：2012-02-14

申请人： Qualcomm Incorporated

发明人： CHEN, Wei-Chuan ,  LI, Xia ,  KANG, Seung H.

IPC分类号： H01L23/552 ,  H01L43/02 ,  H01L27/11502 ,  H01L27/11507 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L23/552 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.