摘要:
Ga—P—S glass compositions that may have application in infrared (IR) windows, waveguiding fibers, or as host glasses for luminescent dopants are described.
摘要:
Transition metal doped Sn phosphate glass compositions and methods of making transition metal doped Sn phosphate glass compositions are described which can be used for example, in sealing applications.
摘要:
Alkali tungstate, molybdate and vanadate glasses, and telecommunications components embodying such glasses, the compositions of the glasses consisting essentially of 15-70 mol percent of at least one oxide selected from the group consisting of WO3, MoO3 and VO2.5, 0-35 % CrO3, 0-15 % UO3, the total WO3 plus MoO3 plus VO2.5 plus CrO3 plus UO3 being 50-70 %, 20-50 % R2O where R represents at least two elements selected from the group consisting of Li, Na, K, Rb, Cs, Ag and Tl, and optionally containing 0-10 % MO where M is selected from the groups of elements consisting of Ca, Ba, Sr, Mg, Cd, Pb, 0-5 % X2O3 where x is at least one element selected from the group consisting of Al, Ga, In and Bi, 0-5 % of at least one transition metal oxide, 0-15 % P2O5 and/or TeO2 and 0-5 % of a rare earth oxide selected from the lanthanide series.
摘要:
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.
摘要:
Ga—P—S glass compositions that may have application in infrared (IR) windows, waveguiding fibers, or as host glasses for luminescent dopants are described.
摘要:
A family of tellurite glasses and optical components for telecommunication systems, the glasses consisting essentially of, as calculated in cation percent, 65-97 % TeO2, and at least one additional oxide of an element having a valence greater than two and selected from the group consisting of Ta, Nb, W, Ti, La, Zr, Hf, Y, Gd, Lu, Sc, Al and Ga, that may contain a lanthanide oxide as a dopant, in particular erbium oxide, and that, when so doped, is characterized by a fluorescent emission spectrum having a relatively broad FWHM value.
摘要:
A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture.
摘要:
The present invention relates to a glass matrix which includes 4-70 wt.% SiO2, 0.5-20 wt.% Al2O3, 0-20 wt.% R2O, 0-30 wt.% R'O, 8-85 wt.% Ta2O5, 0-40 wt.% Nb2O5, and 0.01-1.0 wt.% R''2O3, where R2O + R'O is between about 2-35 wt.%, Ta2O5 + Nb2O5 is between about 8-85 wt.%, R is selected from a group consisting of Li, Na, K, and combinations thereof, R' is selected from a group consisting of Ba, Sr, Ca, Mg, Zn, Pb, and combinations thereof, and R'' is a rare earth element. The present invention also relates to use of the glass matrix in forming optic waveguides such as optic amplifiers. The present invention further relates to a transparent glass ceramic that contains pyrochlore, perovskite, or a combination thereof as its major crystal phase, and includes 4-40 wt.% SiO2, 1-15 wt.% Al2O3, 0-20 wt.% K2O, 0-12 wt.% Na2O, 0-5 wt.% Li2O, 8-85 wt.% Ta2O5, and 0-45 wt.% Nb2O5, wherein Ta2O5 + Nb2O5 is at least about 20 wt.% and (K2O + Li2O + Na2O) is between about 5-20 wt.%. Also disclosed is a method of making the glass ceramic and use of the glass ceramic as a ferro-electric component in electro-optical devices or as a filtering core in an optical filtering device.