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公开(公告)号:EP4141141A1
公开(公告)日:2023-03-01
申请号:EP22192083.8
申请日:2022-08-25
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
IPC分类号: C23C16/455 , C23C16/34 , C23C16/40 , C23C16/44
摘要: A film forming apparatus (10) configured to form a metal oxide film or a metal nitride film through atomic layer deposition by alternately introducing metal compound gas and an OH radical or an NH radical in a reaction container (20). The film forming apparatus (10) including: the reaction container (20); and at least one plasma generator (44,54,94) provided outside the reaction container and configured to generate a first plasma (PI) including an oxygen radical or a nitrogen radical when oxygen or nitrogen is supplied and generate a second plasma (P2) including a hydrogen radical when hydrogen is supplied. The OH radical is generated by collision between the oxygen radical and the hydrogen radical or the NH radical is generated by collision between the nitrogen radical and the hydrogen radical in a downstream region from an outlet of the at least one plasma generator to an inner space of the reaction container.
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公开(公告)号:EP4129495A1
公开(公告)日:2023-02-08
申请号:EP21780572.0
申请日:2021-03-25
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
摘要: A pre-press process includes a first step for bonding a first end portion (12A) of each of a plurality of electronic component bodies (10) to a bonding surface on an exposed surface of a flat plate material (22) disposed in a jig (20), a second step for moving the jig (20) relative to a surface plate (30), a third step for bringing a second end portions (12B) on the opposite side to a first end portion (12A) of each of the plurality of electronic component bodies (10) into contact with the surface plate (30) while the flat plate material (22) is in a softened state so that the flat plate material (22) is deformed to align respective positions of end surfaces (12B1) of the second end portions (12B), a fourth step for curing the flat plate material (22) with the positions of the end surfaces (12B1) aligned with one another, and then a fifth step for moving the jig (20) relative to the surface plate (30) to separate from the surface plate (30) the plurality of electronic component bodies (10) in which the respective positions of the end surfaces (12B1) are aligned with one another.
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公开(公告)号:EP3903947A1
公开(公告)日:2021-11-03
申请号:EP20739084.0
申请日:2020-01-09
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
摘要: A paste coating apparatus (10, 1000) includes a first feeder (30, 30A) that feeds a first belt (20), a mounter (100, 1100) that joins one end portion (2a) of each of a plurality of electronic components (1) to the first belt, a first coater (200, 1200) that coats paste on the other end portion (2b) of each of the plurality of electronic components mounted on the first belt, a first dryer (300, 1300) that dries the paste, a second feeder (50, 50A) that feeds a second belt (40), a transfer device (400, 1400) that transfers the plurality of electronic components from the first belt to the second belt, a second coater (500, 1500) that coats the paste on the one end portion of each of the plurality of electronic components mounted on the second belt, a second dryer (600, 1600) that dries the paste, and a collection device (700, 1700) that winds and collects the second belt.
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公开(公告)号:EP4056731A1
公开(公告)日:2022-09-14
申请号:EP20885070.1
申请日:2020-11-02
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
IPC分类号: C23C16/455 , C23C16/40 , H01L21/31 , H01L21/316
摘要: A film formation method for forming a CVD film (4) and an ALD film (5) on a film formation target. In an ALD process for forming the ALD film, an ALD cycle is repeatedly executed a plurality of times, the ALD cycle including: a first step for filling a reaction container (20) in which the film formation target is disposed, with a source gas introduced through a first supply pipe (100); a second step for exhausting the source gas from the reaction container after the first step; a third step for filling the reaction container with a reactant gas activated by an inductively coupled plasma in a second supply pipe (200) and introduced through the second supply pipe (200) after the second step; and a fourth step for exhausting the reactant gas from the reaction container after the third step. In a CVD process for forming the CVD film, the ALD cycle is executed at least once, and the second step is finished while leaving the source gas in a gas phase in the reaction container.
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公开(公告)号:EP4227010A1
公开(公告)日:2023-08-16
申请号:EP21877436.2
申请日:2021-09-29
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
摘要: A positioning jig assembly (50) includes a positioning main body (60) with a plurality of holes (63) into which, by being elastically deformed, a plurality of electronic component bodies (10) are respectively press-fit, a first guide body (70) and a second guide body (80) disposed to be superimposed on the positioning main body in a planar view from a first direction Z. A plurality of first through-holes (71) are formed in the first guide body (70). A plurality of second through-holes (81) formed in the second guide body (80) are formed in a shape for guiding the electronic component main body (10) on the second guide body to the first through-hole (71). The first through-hole (71) is formed in a shape for provisionally positioning the electronic component main body (10). When height in the first direction of the plurality of electronic component main bodies held by the positioning main body is represented as H, lengths of the first through-hole 71 and the second through-hole (81) are respectively represented as L1 and L2, and depth of the hole (63) is represented as D, L1
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公开(公告)号:EP4120299A1
公开(公告)日:2023-01-18
申请号:EP20923928.4
申请日:2020-03-11
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
摘要: An electronic component manufacturing method comprising: a first step of moving an electronic component body (1) in a first direction (A) relative to a dip layer (3) of a conductive paste to immerse the electronic component body in the dip layer (3); a second step of moving the electronic component body relative to the dip layer in a second direction (B) that is opposite to the first direction (A), thereby separating the electronic component body from the dip layer; a third step of forcibly cutting a connection between the conductive paste (4) coated on the end portions (2) of the electronic component body and the dip layer (3), using a contact with a solid or fluid cutting means (6, 7); and a fourth step of removing excess paste (4A) from the conductive paste coated on the end portions of the electronic component body. The third and fourth steps may be conducted simultaneously by cutting and removing the paste with the paste removal member (6, 7).
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公开(公告)号:EP4056729A1
公开(公告)日:2022-09-14
申请号:EP22159732.1
申请日:2022-03-02
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
IPC分类号: C23C16/40 , C23C16/455 , C23C16/448 , C23C16/452 , H01L21/02
摘要: A method for forming a barium titanate film by conducting an ALD cycle, wherein the ALD cycle comprises forming a titanium oxide film and forming barium oxide film. In the forming of a titanium oxide film, TDMAT (Ti[N(CH 3 ) 2 ] 4 ) is used as first raw material gas, and an OH radical is used as reaction gas, and in the forming of barium oxide film, a vaporized barium complex is used as second raw material gas, and an OH radical is used as reaction gas, and the titanium oxide film and the barium oxide film are alternately formed in a normal order or a reverse order.
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公开(公告)号:EP3598467A1
公开(公告)日:2020-01-22
申请号:EP19184381.2
申请日:2019-07-04
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
IPC分类号: H01G13/00
摘要: An electronic component manufacturing method includes a blotting process of bringing a conductive paste 4 applied to an end portion of each electronic component body 1 held by a jig into contact with a surface 101 of a surface plate 100. The blotting process includes simultaneous performance of a distance changing process of changing the distance between an end face 2A of each electronic component body 1 and the surface 101 of the surface plate 100 and a position changing process of changing a two-dimensional position where the end face 2A of the electronic component body 1 is projected on the surface 101 of the surface plate 100 in such a manner that the direction of the movement of two-dimensional position in parallel to the surface 101 of the surface plate 100 successively varies (e.g., along a circular path).
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公开(公告)号:EP4325540A1
公开(公告)日:2024-02-21
申请号:EP22788012.7
申请日:2022-03-28
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
摘要: An intaglio jig (100, 300) for manufacturing an electronic component (10, 200) having an external electrode (30 to 38, 240, 250) by applying a conductive paste (P) to an electronic component body (20, 210) includes an elastic body (110, 310), and a recessed portion (120, 320) that is formed in the elastic body and in which the conductive paste is contained. The recessed portion includes an opening (121, 321) having an opening width (W2, W6) that conforms to a width (W1, W5) of the external electrode, a bottom surface (122, 322) at a predetermined depth (D) from the opening, and at least one protrusion portion (130 to 132, 330) in which a protrusion height (H1, H2) locally protruding from the bottom surface is less than the predetermined depth (D).
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公开(公告)号:EP4306675A1
公开(公告)日:2024-01-17
申请号:EP22766953.8
申请日:2022-03-02
发明人: SATO, Eiji , SAKAMOTO, Hitoshi
摘要: A method for forming a zeolite membrane by performing an ALD cycle, the ALD cycle including a silicon oxide film forming step and an aluminum oxide film forming step. In the silicon oxide film forming step, an organic Si compound is used as a first raw material gas and OH radicals are used as a reaction gas; in the aluminum oxide film forming step, an organic Al compound is used as a second raw material gas and OH radicals are used as a reaction gas; and the silicon oxide films and the aluminum oxide films are alternately formed in forward or reverse order to form the zeolite membrane.
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