公开(公告)号：EP2287930B1

公开(公告)日：2019-06-05

申请号：EP10185865.2

申请日：2003-07-15

申请人： Cree, Inc.

发明人： Slater, David, B., JR. ,  Williams, Bradley, E. ,  Andrews, Peter, S. ,  Edmond, John, A. ,  Allen, Scott, T. ,  Bharathan, Jayesh

IPC分类号： H01L33/38 ,  H01L33/40

公开(公告)号：EP2320484A1

公开(公告)日：2011-05-11

申请号：EP10185862.9

申请日：2002-07-23

申请人： Cree, Inc.

发明人： Slater, David B., Jr. ,  Williams, Bradley, E. ,  Andrews, Peter, S.

IPC分类号： H01L33/40

CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L33/405 ,  H01L33/62 ,  H01L2924/01322 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/00

摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive Stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive Stack opposite the epitaxial region, to define a bonding region on the multilayer conductive Stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive Stack, across the epitaxial region and onto the substrate. The multilayer conductive Stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.

摘要翻译： 发光二极管包括衬底，在衬底上的外延区域，其中包括二极管区域和在与衬底相对的外延区域上的多层导电叠层。 钝化层至少部分地在与外延区域相对的多层导电叠层上延伸，以在与外延区域相对的多层导电叠层上限定结合区域。 钝化层也横过多层导电叠层延伸穿过外延区并延伸到衬底上。 多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射层以及在与欧姆层相对的反射层上的锡阻挡层。 还可以在与阻挡层相对的锡阻挡层上设置粘附层。 粘合层也可以设置在与锡阻挡层相对的粘合层上。 还可以提供粘接层和基座之间的基座和粘结。

公开(公告)号：EP2287930A1

公开(公告)日：2011-02-23

申请号：EP10185865.2

申请日：2003-07-15

申请人： Cree, Inc.

发明人： Slater, David, B., JR. ,  Williams, Bradley, E. ,  Andrews, Peter, S. ,  Edmond, John, A. ,  Allen, Scott, T. ,  Bharathan, Jayesh

IPC分类号： H01L33/40

CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L2933/0016

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive Stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive Stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive Stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。