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    Light emitting device and light emitting device package
    4.
    发明授权
    Light emitting device and light emitting device package 有权

    公开(公告)号：EP2562815B1

    公开(公告)日：2018-11-14

    申请号：EP12151102.6

    申请日：2012-01-13

    申请人： LG Innotek Co., Ltd.

    发明人： Jeong, Hwan Hee

    IPC分类号： H01L25/075 ,  H01L33/00 ,  H01L33/38

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00012

    摘要： A light emitting device according to the embodiment includes a support substrate; a first light emitting structure disposed on the support substrate and including a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective electrode under the first light emitting structure; a first metal layer around the first reflective electrode; a second light emitting structure disposed on the support substrate and including a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second reflective electrode under the second light emitting structure; a second metal layer around the second reflective electrode; and a contact part making contact with an inner portion of the first conductive type first semiconductor layer of the first light emitting structure and electrically connected to the second reflective electrode.

    CONTACT ETCHING AND METALLIZATION FOR IMPROVED LED DEVICE PERFORMANCE AND RELIABILITY
    5.
    发明公开
    CONTACT ETCHING AND METALLIZATION FOR IMPROVED LED DEVICE PERFORMANCE AND RELIABILITY 审中-公开

    公开(公告)号：EP3378107A1

    公开(公告)日：2018-09-26

    申请号：EP16813257.9

    申请日：2016-11-14

    申请人： Lumileds Holding B.V.

    发明人： CHONG, David ,  TEO, Yeow-Meng

    IPC分类号： H01L33/38 ,  H01L33/40

    CPC分类号： H01L33/382 ,  H01L33/06 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

    摘要： A light emitting device includes a vertical via through the P-type semi-conductor layer and the active layer. Using a vertical via reduces quantum well damage, allows shortening of P-N spacing, and allows increased reflective area. A dielectric structure is formed in the via to provide a sloped wall that extends to an upper surface of the device. Another dielectric layer covers the upper surface and the sloped wall, and provides select contacts to the semiconductor layers. A metal layer is subsequently applied. Because the dielectric layers provide a continuous slope from the surface of the device, the metal layer does not include a vertical drop. Because the active layer does not extend into the via, the contact to the N-type semiconductor layer may be situated closer to the wall of the via, increasing the area available for a reflective layer.

    Light emitting device
    6.
    发明授权
    Light emitting device 有权

    公开(公告)号：EP2755244B1

    公开(公告)日：2018-08-15

    申请号：EP13195535.3

    申请日：2013-12-03

    申请人： LG Innotek Co., Ltd.

    发明人： Jeong, Hwan Hee

    IPC分类号： H01L33/38

    CPC分类号： H01L33/405 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A light emitting device according to the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a first electrode disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer; a second electrode disposed under the light emitting structure and electrically connected to the second conductive semiconductor layer; and a first contact portion disposed through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer.

    LIGHT-EMITTING ELEMENT
    10.
    发明公开
    LIGHT-EMITTING ELEMENT 审中-公开
    发光元件

    公开(公告)号：EP3306680A1

    公开(公告)日：2018-04-11

    申请号：EP16800303.6

    申请日：2016-05-25

    申请人： LG Innotek Co., Ltd.

    发明人： PARK, Sun Woo ,  SUNG, Dong Hyun ,  LEE, Dae Hee ,  LEE, Byoung Woo ,  CHOI, Kwang Ki ,  HAN, Jae Cheon

    IPC分类号： H01L33/36

    CPC分类号： H01L33/387 ,  H01L33/0016 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

    摘要： Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.

    摘要翻译： 根据一个实施例公开了一种发光元件，包括：发光结构，包括第一半导体层，有源层和第二半导体层; 电连接到第二半导体层的第二导电层; 第一导电层，所述第一导电层包括通过所述第二导电层和所述发光结构电连接到所述第一半导体层的多个贯通电极; 绝缘层，用于使所述多个贯通电极与所述有源层，所述第二半导体层和所述第二导电层电绝缘; 以及设置在所述第二导电层的暴露区域中的电极焊盘，其中所述多个贯通电极在电连接到所述第一半导体层的第一区域的面积上不同。