公开(公告)号：EP2614529A2

公开(公告)日：2013-07-17

申请号：EP11831085.3

申请日：2011-07-05

申请人： Cree, Inc.

发明人： RADULESCU, Fabian ,  GAO, Jennifer ,  DUC, Jennifer ,  SHEPPARD, Scott

IPC分类号： H01L29/778 ,  H01L21/338 ,  H01L21/306

CPC分类号： H01L29/7786 ,  H01L21/28593 ,  H01L21/76804 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/66871 ,  H01L29/812 ,  H01L29/872

摘要： Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided.

公开(公告)号：EP3824493A1

公开(公告)日：2021-05-26

申请号：EP19728797.2

申请日：2019-05-14

申请人： Cree, Inc.

发明人： SRIRAM, Saptharishi ,  GAO, Jennifer ,  FISHER, Jeremy ,  SHEPPARD, Scott

IPC分类号： H01L21/8252 ,  H01L27/06 ,  H01L27/085 ,  H01L29/20 ,  H01L29/778 ,  H01L29/40 ,  H01L27/088