HIGH EFFICIENCY LEDS WITH TUNNEL JUNCTIONS
    1.
    发明公开
    HIGH EFFICIENCY LEDS WITH TUNNEL JUNCTIONS 审中-公开
    与隧道CROSSINGS高功率LED

    公开(公告)号:EP1992050A1

    公开(公告)日:2008-11-19

    申请号:EP07748987.0

    申请日:2007-01-17

    申请人: CREE, INC.

    IPC分类号: H01S5/042 H01L33/00

    摘要: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

    LIGHT-EMITTING DIODE COMPONENT
    3.
    发明公开
    LIGHT-EMITTING DIODE COMPONENT 审中-公开
    发光二极管成分

    公开(公告)号:EP2671213A1

    公开(公告)日:2013-12-11

    申请号:EP12701823.2

    申请日:2012-01-24

    申请人: Cree, Inc.

    IPC分类号: G09F9/33

    摘要: An LED component includes, according to a first embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an optical lens overlying the LED chips and having a lens base attached to the substrate, where the LED chips are positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The LED component includes, according to a second embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an array of optical lenses, each optical lens overlying at least one of the LED chips and having a lens base attached to the substrate, where at least one of the LED chips is positioned to provide a peak emission shifted from a perpendicular centerline of the respective lens base.

    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS
    5.
    发明公开
    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS 有权
    EMISSIONSABSTIMMVERFAHREN和使用过程中产生的设备

    公开(公告)号:EP2283526A2

    公开(公告)日:2011-02-16

    申请号:EP09728238.8

    申请日:2009-03-31

    申请人: Cree, Inc.

    IPC分类号: H01L33/00

    摘要: A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.