公开(公告)号：EP2740148A1

公开(公告)日：2014-06-11

申请号：EP12820668.7

申请日：2012-06-22

申请人： Cree, Inc. ,  Auburn University

发明人： DHAR, Sarit ,  RYU, Sei-Hyung ,  AGARWAL, Anant ,  WILLIAMS, John Robert

IPC分类号： H01L21/00

CPC分类号： H01L21/3115 ,  H01L21/049 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/408 ,  H01L29/51 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802

摘要： Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.

公开(公告)号：EP2724363B1

公开(公告)日：2018-04-04

申请号：EP12741411.8

申请日：2012-06-26

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  CHENG, Lin ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  MAKI, Erik ,  GURGANUS, Jason ,  LICHTENWALNER, Daniel, Jenner

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L21/331 ,  H01L21/336 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

公开(公告)号：EP2705527A1

公开(公告)日：2014-03-12

申请号：EP12782360.7

申请日：2012-03-01

申请人： Cree, Inc.

发明人： RYU, Sei-Hyung ,  CAPELL, Doyle Craig ,  CHENG, Lin ,  DHAR, Sarit ,  JONAS, Charlotte ,  AGARWAL, Anant ,  PALMOUR, John

IPC分类号： H01L21/336 ,  H01L29/06

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/7395

摘要： A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region.

公开(公告)号：EP3352201B1

公开(公告)日：2020-11-18

申请号：EP18155888.3

申请日：2012-06-26

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  CHENG, Lin ,  RYU, Sei-Hyung ,  AGARWAL, Anant Kumar ,  PALMOUR, John Williams ,  MAKI, Erik ,  GURGANUS, Jason ,  LICHTENWALNER, Daniel Jenner

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L21/331 ,  H01L21/336 ,  H01L29/16

公开(公告)号：EP2681769A1

公开(公告)日：2014-01-08

申请号：EP12701557.6

申请日：2012-01-06

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  RYU, Sei-Hyung ,  CHENG, Lin ,  AGARWAL, Anant, K.

IPC分类号： H01L29/10

CPC分类号： H01L29/107 ,  H01L21/225 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/66568

摘要： Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are Metal-Oxide-Semiconductor (MOS) devices, and even more preferably the semiconductor devices are Silicon Carbide (SiC) MOS devices. In one embodiment, a semiconductor device includes a SiC substrate of a first conductivity type, a first well of a second conductivity type, a second well of the second conductivity type, and a surface diffused channel of the second conductivity type formed at the surface of semiconductor device between the first and second wells. A depth and doping concentration of the surface diffused channel are controlled to provide increased carrier mobility for the semiconductor device as compared to the same semiconductor device without the surface diffused channel region when in the on-state while retaining a turn-on, or threshold, voltage that provides normally-off behavior.

公开(公告)号：EP2724363A1

公开(公告)日：2014-04-30

申请号：EP12741411.8

申请日：2012-06-26

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  CHENG, Lin ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  MAKI, Erik ,  GURGANUS, Jason ,  LICHTENWALNER, Daniel, Jenner

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L21/331 ,  H01L21/336 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

公开(公告)号：EP2502261A1

公开(公告)日：2012-09-26

申请号：EP10726769.2

申请日：2010-06-22

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  RYU, Sei-Hyung

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/51

CPC分类号： H01L29/66068 ,  H01L29/1033 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/51 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

摘要： A metal-insulator-semiconductor field-effect transistor (MISFET) includes a SiC layer with source and drain regions of a first conductivity type spaced apart therein. A first gate insulation layer is on the SiC layer and has a net charge along an interface with the SiC layer that is the same polarity as majority carriers of the source region. A gate contact is on the first gate insulation layer over a channel region of the SiC layer between the source and drain regions. The net charge along the interface between the first gate insulation layer and the SiC layer may deplete majority carriers from an adjacent portion of the channel region between the source and drain regions in the SiC layer, which may increase the threshold voltage of the MISFET and/or increase the electron mobility therein.

摘要翻译： 金属 - 绝缘体 - 半导体场效应晶体管（MISFET）包括具有第一导电类型的源极和漏极区域的SiC层。 第一栅极绝缘层在SiC层上并且沿与SiC层的界面具有净电荷，该极性与源极区的多数载流子具有相同的极性。 栅极触点位于源极和漏极区域之间的SiC层的沟道区上的第一栅极绝缘层上。 沿着所述第一栅绝缘层和SiC层可以由在SiC层的源和漏区之间的沟道区的相邻部分，这可以增加MISFET和/的阈值电压耗尽多数载流子之间的界面处的净电荷 或增加其中的电子迁移率。

公开(公告)号：EP2705527B1

公开(公告)日：2019-02-27

申请号：EP12782360.7

申请日：2012-03-01

申请人： Cree, Inc.

发明人： RYU, Sei-Hyung ,  CAPELL, Doyle Craig ,  CHENG, Lin ,  DHAR, Sarit ,  JONAS, Charlotte ,  AGARWAL, Anant ,  PALMOUR, John

IPC分类号： H01L29/12 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739

公开(公告)号：EP3352201A1

公开(公告)日：2018-07-25

申请号：EP18155888.3

申请日：2012-06-26

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  CHENG, Lin ,  RYU, Sei-Hyung ,  AGARWAL, Anant Kumar ,  PALMOUR, John Williams ,  MAKI, Erik ,  GURGANUS, Jason ,  LICHTENWALNER, Daniel Jenner

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L21/331 ,  H01L21/336 ,  H01L29/16

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.