公开(公告)号：EP3832711A1

公开(公告)日：2021-06-09

申请号：EP21151226.4

申请日：2014-05-14

申请人： Cree, Inc.

发明人： DAS, Mrinal, K. ,  CALLANAN, Robert, J. ,  LIN, Henry ,  PALMOUR, John, Williams

IPC分类号： H01L21/8252 ,  H01L23/498 ,  H01L25/07 ,  H01L25/18 ,  H01L27/06 ,  H01L27/095 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H02M7/00 ,  H01L29/417 ,  H01L29/66 ,  H01L23/373 ,  H01L21/82

摘要： A power module comprises: a baseplate (L0) comprising aluminum silicon carbide; a power substrate (L3) on the baseplate, the power substrate comprising silicon nitride; and a switch module (SM1 -SM10) mounted on the power substrate, the switch module comprising a silicon carbide transistor (Q1-Q10). The power module has a power density of up to 500 watts/cm 2 .

公开(公告)号：EP2754181B1

公开(公告)日：2017-07-12

申请号：EP12769789.4

申请日：2012-09-07

申请人： Cree, Inc.

发明人： HENNING, Jason, Patrick ,  ZHANG, Qingchun ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  ALLEN, Scott

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/861

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device (10) comprises a drift layer (22) having a first surface with an active region (14) and a plurality of junction barrier element recesses (40), the drift layer being doped with a doping material of a first conductivity type and associated with an edge termination region (16) that is substantially laterally adjacent the active region. A Schottky layer (24) is over the active region of the first surface to form a Schottky junction. A plurality of first doped regions (30) extend into the drift layer about corresponding ones of the plurality of junction barrier element recesses (40) wherein the plurality of first doped regions are doped with a doping material of a second conductivity type, which is opposite the first conductivity type, and form an array of junction barrier elements in the drift layer below the Schottky junction. A well (34) ia formed in the drift layer in the edge termination region, the well having guard rings (36) and being doped with the doping material of the second conductivity type where the plurality of guard rings are formed in the well, wherein the guard rings are coplanar with the junction barrier element recesses.

摘要翻译： 本公开总体上涉及一种肖特基二极管，其具有衬底，设置在衬底上的漂移层以及设置在漂移层的有源区上的肖特基层。 选择用于肖特基层的金属和用于漂移层的半导体材料以在漂移层和肖特基层之间提供低势垒高度肖特基结。

公开(公告)号：EP2997596A1

公开(公告)日：2016-03-23

申请号：EP14730035.4

申请日：2014-05-14

申请人： Cree, Inc.

发明人： DAS, Mrinal, K. ,  CALLANAN, Robert, J. ,  LIN, Henry ,  PALMOUR, John, Williams

IPC分类号： H01L27/06 ,  H01L21/82 ,  H01L21/8252 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L27/0605 ,  H01L21/8213 ,  H01L21/8252 ,  H01L23/49861 ,  H01L25/072 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/095 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/49111 ,  H01L2924/13055 ,  H01L2924/19107 ,  H02M7/003 ,  H01L2924/00

摘要： The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

公开(公告)号：EP2754181A1

公开(公告)日：2014-07-16

申请号：EP12769789.4

申请日：2012-09-07

申请人： Cree, Inc.

发明人： HENNING, Jason, Patrick ,  ZHANG, Qingchun ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  ALLEN, Scott

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/861

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device (10) comprises a drift layer (22) having a first surface with an active region (14) and a plurality of junction barrier element recesses (40), the drift layer being doped with a doping material of a first conductivity type and associated with an edge termination region (16) that is substantially laterally adjacent the active region. A Schottky layer (24) is over the active region of the first surface to form a Schottky junction. A plurality of first doped regions (30) extend into the drift layer about corresponding ones of the plurality of junction barrier element recesses (40) wherein the plurality of first doped regions are doped with a doping material of a second conductivity type, which is opposite the first conductivity type, and form an array of junction barrier elements in the drift layer below the Schottky junction. A well (34) ia formed in the drift layer in the edge termination region, the well having guard rings (36) and being doped with the doping material of the second conductivity type where the plurality of guard rings are formed in the well, wherein the guard rings are coplanar with the junction barrier element recesses.

摘要翻译： 本公开总体上涉及具有衬底，设置在衬底上的漂移层和设置在漂移层的有源区上的肖特基层的肖特基二极管。 选择用于肖特基金属的金属和用于漂移层的半导体材料以在漂移层和肖特基层之间提供低势垒高度的肖特基结。

公开(公告)号：EP2724363A1

公开(公告)日：2014-04-30

申请号：EP12741411.8

申请日：2012-06-26

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  CHENG, Lin ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  MAKI, Erik ,  GURGANUS, Jason ,  LICHTENWALNER, Daniel, Jenner

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L21/331 ,  H01L21/336 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

公开(公告)号：EP2754179B1

公开(公告)日：2017-04-12

申请号：EP12766237.7

申请日：2012-09-07

申请人： Cree, Inc.

发明人： HENNING, Jason, Patrick ,  ZHANG, Qingchun ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  ALLEN, Scott

IPC分类号： H01L29/872 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

公开(公告)号：EP1086496A2

公开(公告)日：2001-03-28

申请号：EP99961985.1

申请日：1999-06-02

申请人： CREE, INC.

发明人： SHEPPARD, Scott, Thomas ,  ALLEN, Scott, Thomas ,  PALMOUR, John, Williams

IPC分类号： H01L29/778 ,  H01L29/24

CPC分类号： H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/452 ,  H01L29/7783 ,  H01L29/7787

摘要： A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active structure of aluminum gallium nitride (14) on the gallium nitride layer, a passivation layer (23) on the aluminum gallium nitride active structure, and respective source, drain and gate contacts (21, 22, 23) to the aluminum gallium nitride active structure.

公开(公告)号：EP2724363B1

公开(公告)日：2018-04-04

申请号：EP12741411.8

申请日：2012-06-26

申请人： Cree, Inc.

发明人： DHAR, Sarit ,  CHENG, Lin ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  MAKI, Erik ,  GURGANUS, Jason ,  LICHTENWALNER, Daniel, Jenner

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L21/314 ,  H01L21/331 ,  H01L21/336 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

公开(公告)号：EP2754180A1

公开(公告)日：2014-07-16

申请号：EP12766760.8

申请日：2012-09-07

申请人： Cree, Inc.

发明人： HENNING, Jason, Patrick ,  ZHANG, Qingchun ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  ALLEN, Scott

IPC分类号： H01L29/872 ,  H01L29/06

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to be formed. Once the recesses are formed in the drift layer, these areas about and at the bottom of the recesses are doped to form the respective edge termination elements.

摘要翻译： 边缘终端结构的元件，例如多个同心保护环，是漂移层中的有效掺杂区域。 为了增加这些掺杂区域的深度，可以在将要形成边缘终端结构的元件的漂移层的表面中形成单独的凹陷。 一旦在漂移层中形成凹槽，凹槽底部周围和底部的这些区域被掺杂以形成相应的边缘终端元件。

公开(公告)号：EP2754179A1

公开(公告)日：2014-07-16

申请号：EP12766237.7

申请日：2012-09-07

申请人： Cree, Inc.

发明人： HENNING, Jason, Patrick ,  ZHANG, Qingchun ,  RYU, Sei-Hyung ,  AGARWAL, Anant, Kumar ,  PALMOUR, John, Williams ,  ALLEN, Scott

IPC分类号： H01L29/872 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.

摘要翻译： 诸如多个同心保护环的边缘终端结构的元件在漂移层中是有效的掺杂区域。 为了增加这些掺杂区域的深度，可以在要形成边缘终端结构的元件的漂移层的表面中形成各自的凹部。 一旦凹陷形成在漂移层中，凹槽周围和底部的这些区域被掺杂以形成相应的边缘终端元件。