利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.013 秒)

    Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding
    1.
    发明公开
    Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding 审中-公开
    的光发射器件和倒装芯片键合合适的发光器件倒装芯片接合

    公开(公告)号：EP2262017A3

    公开(公告)日：2017-01-04

    申请号：EP10179427.9

    申请日：2002-07-22

    申请人： Cree, Inc. ,  Cree Microwave, LLC

    发明人： Slater, David ,  Bharathan, Jayesh ,  Edmond, John ,  Raffetto, Mark ,  Mohammed, Anwar ,  Negley, Gerald H. ,  Andrews, Peter

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

    摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount.; Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译： 发光器件具有在基板的台面结构，并在台面电极通过形成导电的预定图案，其附接材料在电极中的至少一个与基座和安装连接到在倒装芯片结构的副安装座 发光器件，其与所述基座。 附导电的预定图案被选择的材料，以便防止导电性附加材料从接触具有当发光被安装到所述基座装置相反的导电类型的区域。 导电的预定图案附加材料可以提供附接材料的体积的确小于由在所述电极与所述电极和所述底座之间的距离的区域限定的体积。 光，因此具有导电性的预定义模式附加材料设置发光装置。 上的基板，彩色具有氮化镓系发光区域的发光装置：诸如碳化硅衬底，可以由氮化镓基发光区域的电极的安装到基台利用乙安装在倒装芯片配置 -stage可固化的环氧这一点。 因此具有其中设置该B阶可固化的环氧发光器件。

    High efficiency group III nitride LED with lenticular surface
    5.
    发明公开
    High efficiency group III nitride LED with lenticular surface 审中-公开
    Hochleistungs-Gruppe-III-Nitrid-LED mitlinsenförmigerOberfläche

    公开(公告)号：EP2267802A2

    公开(公告)日：2010-12-29

    申请号：EP10185898.3

    申请日：2005-09-15

    申请人： Cree, Inc.

    发明人： Edmond, John, Adam ,  Slater, David, Beardsley, Jr. ,  Bharathan, Jayesh ,  Donofrio, Matthew

    IPC分类号： H01L33/00

    CPC分类号： H01L33/007 ,  H01L33/22 ,  H01L33/44

    摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing Silicon carbide on or above the light emitting region.

    摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或上方的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的透镜状表面。

    Light emitting diode including barrier layers and manufacturing method therefore
    9.
    发明公开
    Light emitting diode including barrier layers and manufacturing method therefore 审中-公开
    Leuchtdiode mit Barriereschichten und Herstellungsverfahren

    公开(公告)号：EP2287930A1

    公开(公告)日：2011-02-23

    申请号：EP10185865.2

    申请日：2003-07-15

    申请人： Cree, Inc.

    发明人： Slater, David, B., JR. ,  Williams, Bradley, E. ,  Andrews, Peter, S. ,  Edmond, John, A. ,  Allen, Scott, T. ,  Bharathan, Jayesh

    IPC分类号： H01L33/40

    CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L2933/0016

    摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive Stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive Stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive Stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。