公开(公告)号：EP2397900B1

公开(公告)日：2014-10-08

申请号：EP10741178.7

申请日：2010-02-04

申请人： DAI NIPPON PRINTING CO., LTD.

发明人： NAGAI, Takaharu ,  TAKAMIZAWA, Hideyoshi ,  MOHRI, Hiroshi ,  MORIKAWA, Yasutaka ,  HAYANO, Katsuya

IPC分类号： G03F1/72 ,  H01L21/027 ,  G03F1/00 ,  G03F1/36 ,  G03F1/32

CPC分类号： G03F1/72 ,  G03F1/0076 ,  G03F1/0092 ,  G03F1/144 ,  G03F1/28 ,  G03F1/30 ,  G03F1/32 ,  G03F1/36 ,  G03F1/38 ,  G03F1/44 ,  G03F1/80

摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.

公开(公告)号：EP2397900A1

公开(公告)日：2011-12-21

申请号：EP10741178.7

申请日：2010-02-04

申请人： Dai Nippon Printing Co., Ltd.

发明人： NAGAI, Takaharu ,  TAKAMIZAWA, Hideyoshi ,  MOHRI, Hiroshi ,  MORIKAWA, Yasutaka ,  HAYANO, Katsuya

IPC分类号： G03F1/08 ,  H01L21/027

CPC分类号： G03F1/72 ,  G03F1/0076 ,  G03F1/0092 ,  G03F1/144 ,  G03F1/28 ,  G03F1/30 ,  G03F1/32 ,  G03F1/36 ,  G03F1/38 ,  G03F1/44 ,  G03F1/80

摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.

摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图案和辅助图形的制造方法，用于通过离轴照明进行投影曝光的辅助图案和制造方法不能解决辅助图案，同时 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是一种光掩模，其包括主图案，其通过投影曝光转移到转印目标表面，辅助图案形成在主图案附近并且不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。