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公开(公告)号：EP2056161B1
公开(公告)日：2018-05-23
申请号：EP07791003.2
申请日：2007-07-19
发明人： KITAHATA, Yasuhisa , MORIKAWA, Yasutaka , ADACHI, Takashi , TOYAMA, Nobuhito , INAZUKI, Yuichi , SUTOU, Takanori
CPC分类号： G03F1/70 , G03F1/54 , G03F7/70341
摘要： The present invention provides a photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens, which is characterized in that the photomask comprises a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further characterized in that, given that a thickness of the light shielding film or semi-transparent film is "t" nm, a refractive index is "n", an extinction factor is "k", and a bias of a space part of the mask pattern is "d" nm, when "t", "d", "n" and "k" are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.
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公开(公告)号：EP2397900B1
公开(公告)日：2014-10-08
申请号：EP10741178.7
申请日：2010-02-04
发明人： NAGAI, Takaharu , TAKAMIZAWA, Hideyoshi , MOHRI, Hiroshi , MORIKAWA, Yasutaka , HAYANO, Katsuya
IPC分类号： G03F1/72 , H01L21/027 , G03F1/00 , G03F1/36 , G03F1/32
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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3.发明公开PHOTOMASK AND METHODS FOR MANUFACTURING AND CORRECTING PHOTOMASK 有权FOTOMASKE UND VERFAHREN ZUR HERSTELLUNG DER FOTOMASKE
公开(公告)号：EP2397900A1
公开(公告)日：2011-12-21
申请号：EP10741178.7
申请日：2010-02-04
发明人： NAGAI, Takaharu , TAKAMIZAWA, Hideyoshi , MOHRI, Hiroshi , MORIKAWA, Yasutaka , HAYANO, Katsuya
IPC分类号： G03F1/08 , H01L21/027
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图案和辅助图形的制造方法，用于通过离轴照明进行投影曝光的辅助图案和制造方法不能解决辅助图案，同时 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是一种光掩模，其包括主图案，其通过投影曝光转移到转印目标表面，辅助图案形成在主图案附近并且不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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公开(公告)号：EP2056161A1
公开(公告)日：2009-05-06
申请号：EP07791003.2
申请日：2007-07-19
发明人： KITAHATA, Yasuhisa , MORIKAWA, Yasutaka , ADACHI, Takashi , TOYAMA, Nobuhito , INAZUKI, Yuichi , SUTOU, Takanori
IPC分类号： G03F1/08 , H01L21/027
CPC分类号： G03F1/70 , G03F1/54 , G03F7/70341
摘要： The present invention provides a photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens, which is characterized in that the photomask comprises a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further characterized in that, given that a thickness of the light shielding film or semi-transparent film is "t" nm, a refractive index is "n", an extinction factor is "k", and a bias of a space part of the mask pattern is "d" nm, when "t", "d", "n" and "k" are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.
摘要翻译： 本发明提供一种光掩模，其提高了光掩模具有的成像性能，并且在60nm或更小的半间距的光刻中在晶片上形成良好的微观图像。 本发明提供一种用于光刻的光掩模，其使用ArF准分子激光器作为用于通过具有高NA透镜的四极偏振照明的浸没曝光的曝光源，其特征在于，所述光掩模包括遮光膜或半透明的掩模图案， 透明膜，其特征在于，由于遮光膜或半透明膜的厚度为“t”nm，折射率为“n”，消光系数为“k”，并且 掩模图案的空间部分的偏置为“d”nm，当调整“t”，“d”，“n”和“k”并且将光掩模用于光刻时，光学图像对比度超过 0.580。
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