公开(公告)号：EP3007242A4

公开(公告)日：2017-02-01

申请号：EP14804218

申请日：2014-05-22

申请人： DENSO CORP ,  NAT INST ADVANCED IND SCIENCE & TECH

发明人： TESHIGAHARA AKIHIKO ,  KANO KAZUHIKO ,  AKIYAMA MORITO ,  NISHIKUBO KEIKO

IPC分类号： H01L41/187 ,  C23C14/06 ,  H01L41/316

CPC分类号： H01L41/18 ,  C23C14/0052 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/18 ,  C23C14/185 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/46 ,  H01L41/187 ,  H01L41/316

摘要： A piezoelectric thin film (1) is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at% or less. When producing the piezoelectric thin film (1), scandium and aluminum are sputtered simultaneously on a substrate (21) from a scandium aluminum alloy target material (10) having a carbon atomic content of 5 at% or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam (31) on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

摘要翻译： 通过溅射形成压电薄膜（1），并且基本上由氮化钪组成。 碳原子含量为2.5原子％以下。 在制造压电薄膜（1）时，在碳原子含量为5at％以下的钪铝合金靶材（10）的基板（21）上同时溅射钪和铝，在至少氮 气体存在。 也可以通过在合金靶材的相对表面上以倾斜角施加离子束（31）来进行溅射。 此外，也可以从Sc靶材料和Al靶材料在基板上同时溅射铝和钪。 结果，可以提供压电性能优异的压电薄膜及其制造方法。