摘要:
There is provided a lead-free piezoelectric material having a satisfactory piezoelectric constant and mechanical quality factor in the range of device operating temperatures (from −30° C. to 50° C.). The piezoelectric material contains a main constituent containing a perovskite-type metal oxide expressed by the general formula (Ba1-xCax)a(Ti1-yZry)O3, where x, y and a satisfy the 0.030≦x
摘要:
There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO 3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn 2+ ), trivalent manganese (Mn 3+ ), and tetravalent manganese (Mn 4+ ). A molar ratio (Mn 2+ /(Mn 3+ +Mn 4+ )) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.
摘要:
The invention relates to a mechanical structure comprising a stack containing an active substrate (10) and at least one actuator (20) suitable for generating vibrations in the region of said active substrate, said stack comprising a basic structure for the amplification of said vibrations (30), arranged between said actuator and said active substrate, the structure being used to transmit and amplify said vibrations; and comprising at least one trench (Ti) arranged between said actuator and said active substrate. The invention also relates to a method for producing said structure, comprising the use of a temporary substrate.
摘要:
A piezoelectric element that can decrease the output voltage for detection relative to the input voltage for driving without requiring a step-down circuit between a detection phase electrode and a phase comparator and an oscillatory wave motor including the piezoelectric element are provided. A piezoelectric element includes a piezoelectric material (1) having a first surface and a second surface, a common electrode (2) disposed on the first surface, and a drive phase electrode (3, 4) and a detection phase electrode (8) disposed on the second surface. An absolute value d(1) of a piezoelectric constant of the piezoelectric material in a first portion sandwiched between the drive phase electrode and the common electrode and an absolute value d(2) of a piezoelectric constant of the piezoelectric material in a second portion sandwiched between the detection phase electrode and the common electrode satisfy d(2)
摘要:
This disclosure relates to haptic feedback generators, including bistable materials for providing haptic feedback to a user. Such haptic feedback generators are useful in structural materials, such as elements of wearables or accessories.
摘要:
A monolithic integration of phase change material (PCM) switches with a MEMS resonator is provided to implement switching and reconfiguration functionalities. MEMS resonator includes a piezoelectric material to control terminal connections to the electrodes. The PCM is operable between an ON state and an OFF state by application of heat, which causes the phase change material to change from an amorphous state to a crystalline state or from a crystalline state to an amorphous state, the amorphous state and the crystalline state each associated with one of the ON state and the OFF state. A method of fabricating the MEMS resonator with phase change material is provided. A reconfigurable filter system using the MEMS resonators is also provided.
摘要:
In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La 2 O 3 , Ta 2 O 5 , Ga 2 O 3 , and Al 2 O 3 , wherein a mixture having a composition represented by y(La 2 O 3 ) + (1-x-y-z)(Ta 2 O 5 ) + z(Ga 2 O 3 ) + x(Al 2 O 3 ) (in the formula, 0
摘要:
A piezoelectric element (300) includes a first electrode (60) formed on a substrate, a piezoelectric layer (70) which is formed on the first electrode and includes a complex oxide with an ABO 3 -type perovskite structure represented by the following formula (1); and a second electrode (80) formed on the piezoelectric layer, in which a seed layer (65) including a complex oxide with an ABO 3 perovskite structure in which K and Nb are included between the first electrode and the piezoelectric layer, and the piezoelectric layer is formed from a polycrystal that is preferentially orientated on the (110) plane.