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公开(公告)号：EP2056161A1
公开(公告)日：2009-05-06
申请号：EP07791003.2
申请日：2007-07-19
发明人： KITAHATA, Yasuhisa , MORIKAWA, Yasutaka , ADACHI, Takashi , TOYAMA, Nobuhito , INAZUKI, Yuichi , SUTOU, Takanori
IPC分类号： G03F1/08 , H01L21/027
CPC分类号： G03F1/70 , G03F1/54 , G03F7/70341
摘要： The present invention provides a photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens, which is characterized in that the photomask comprises a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further characterized in that, given that a thickness of the light shielding film or semi-transparent film is "t" nm, a refractive index is "n", an extinction factor is "k", and a bias of a space part of the mask pattern is "d" nm, when "t", "d", "n" and "k" are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.
摘要翻译： 本发明提供一种光掩模，其提高了光掩模具有的成像性能，并且在60nm或更小的半间距的光刻中在晶片上形成良好的微观图像。 本发明提供一种用于光刻的光掩模，其使用ArF准分子激光器作为用于通过具有高NA透镜的四极偏振照明的浸没曝光的曝光源，其特征在于，所述光掩模包括遮光膜或半透明的掩模图案， 透明膜，其特征在于，由于遮光膜或半透明膜的厚度为“t”nm，折射率为“n”，消光系数为“k”，并且 掩模图案的空间部分的偏置为“d”nm，当调整“t”，“d”，“n”和“k”并且将光掩模用于光刻时，光学图像对比度超过 0.580。
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公开(公告)号：EP2056161B1
公开(公告)日：2018-05-23
申请号：EP07791003.2
申请日：2007-07-19
发明人： KITAHATA, Yasuhisa , MORIKAWA, Yasutaka , ADACHI, Takashi , TOYAMA, Nobuhito , INAZUKI, Yuichi , SUTOU, Takanori
CPC分类号： G03F1/70 , G03F1/54 , G03F7/70341
摘要： The present invention provides a photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens, which is characterized in that the photomask comprises a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further characterized in that, given that a thickness of the light shielding film or semi-transparent film is "t" nm, a refractive index is "n", an extinction factor is "k", and a bias of a space part of the mask pattern is "d" nm, when "t", "d", "n" and "k" are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.
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