公开(公告)号：EP2745341A1

公开(公告)日：2014-06-25

申请号：EP12750677.2

申请日：2012-08-14

申请人： Dow Corning Corporation ,  Dow Corning Toray Co., Ltd. ,  Hemlock Semiconductor Corporation

发明人： DEHTIAR, Max ,  FISHER, Paul ,  GAVE, Matthew, A. ,  HERRON, William ,  HINO, Takakazu ,  HWANG, Byung, K. ,  LARIMER, Jennifer ,  LEE, Jeong, Yong ,  MCDONALD, Joel, P. ,  SCHRAUBEN, Mark ,  TABLER, Raymond

IPC分类号： H01M4/134 ,  H01M4/139 ,  H01M4/02 ,  H01M4/04 ,  H01M4/1395

CPC分类号： H01M4/386 ,  C01B33/027 ,  H01M4/134 ,  H01M4/1395 ,  Y10T428/2982

摘要： An electrode composition comprises a silicon powder comprising non- crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt.%. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650°C and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.