NANOSCALE PHOTOLITHOGRAPHY
    3.
    发明公开
    NANOSCALE PHOTOLITHOGRAPHY 审中-公开
    NANOSKALIGE FOTOLITHOGRAFIE

    公开(公告)号:EP2638432A2

    公开(公告)日:2013-09-18

    申请号:EP11793532.0

    申请日:2011-11-07

    IPC分类号: G03F7/00 G03F7/16 G03F7/40

    摘要: A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.