摘要:
A method of nanopatterning includes the steps of providing the resist film (12) and forming the pattern in the resist film (12). The resist film (12) includes an organosilicone compound having at least two vinyl groups, an organosilicone crosslinker different from the organosilicone compound, a catalyst, and a catalyst inhibitor. The cured resist film (12) includes the reaction product of the organosilicone compound having at least two vinyl groups and the organosilicone crosslinker different from the organosilicone compound, in the presence of the catalyst and the catalyst inhibitor. The article (10) includes a substrate (14), and the cured resist film (12) is disposed on the substrate (14). Due to the presence of the catalyst inhibitor in the resist film (12), the resist film (12) may be manipulated for hours at room temperature without curing. At the same time, the resist film (12) cures in a sufficiently short period of time to be commercially valuable.
摘要:
A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.
摘要:
This invention pertains to silsesquioxane resins useful in antireflcctive coatings wherein the silsesquioxane resin has the formula (PhSiO(3-x)/2(OR' )x)m(HSiO(3-x)/2(OR')x)n(MeSiO(3-x)/2(OR')x)o(RSiO(3-x)/2(OR' )χ)p where Ph is a phenyl group Me is a methyl group, R is selected from a reactive organic functional group or curable group, R' is hydride or a hydrocarbon group, x has a value of 0,1 or 2; m has a value of 0.01 to 0.97, n has a value of 0.01 to 0.97, o has a value of 0.01 to 0.97, p has a value of 0.01 to 0.97, and m + n + o + p = 1. The resins are cured when baked at elevated temperatures. Alternatively, the compositions may comprise a free radical initiator or other additives such as thermal or photo acids and bases to improve the cure profile of the resin. In addition, the presence of a hydride group in the silsesquioxane resin is essential for the desired strip-ability as a 193nm ARC material.
摘要翻译:本发明涉及可用于抗反射涂层中的倍半硅氧烷树脂,其中倍半硅氧烷树脂具有式(PhSiO(3-x)/ 2(OR')x)m(HSiO(3-x)/ 2(OR')x)n 其中Ph是苯基Me是甲基,R选自反应性有机基团(例如甲基,乙基,丙基,异丁基,叔丁基, 官能团或可固化基团,R'是氢化物或烃基,x具有0.1或2的值; m的值为0.01〜0.97,n的值为0.01〜0.97,o的值为0.01〜0.97,p的值为0.01〜0.97,m + n + o + p = 1。 在高温下烘烤时固化。 或者,组合物可以包含自由基引发剂或其他添加剂,例如热或光酸和碱以改善树脂的固化分布。 另外,在倍半硅氧烷树脂中存在氢化物基团对于作为193nm ARC材料的期望的剥离能力是必不可少的。
摘要:
An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.
摘要:
Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO (3-x) /2 (OH) x) mHSiO (3-x) /2 (OH) x) n (MeSiO (3-x) /2 (OH) x) p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m + n + p = 1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronique device.