NANOSCALE PHOTOLITHOGRAPHY
    2.
    发明公开
    NANOSCALE PHOTOLITHOGRAPHY 审中-公开
    NANOSKALIGE FOTOLITHOGRAFIE

    公开(公告)号:EP2638432A2

    公开(公告)日:2013-09-18

    申请号:EP11793532.0

    申请日:2011-11-07

    IPC分类号: G03F7/00 G03F7/16 G03F7/40

    摘要: A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.

    SILSESQUIOXANE RESINS
    3.
    发明公开
    SILSESQUIOXANE RESINS 审中-公开
    SILESQUIOXANE树脂

    公开(公告)号:EP2238198A1

    公开(公告)日:2010-10-13

    申请号:EP08870812.8

    申请日:2008-11-18

    摘要: This invention pertains to silsesquioxane resins useful in antireflcctive coatings wherein the silsesquioxane resin has the formula (PhSiO(3-x)/2(OR' )x)m(HSiO(3-x)/2(OR')x)n(MeSiO(3-x)/2(OR')x)o(RSiO(3-x)/2(OR' )χ)p where Ph is a phenyl group Me is a methyl group, R is selected from a reactive organic functional group or curable group, R' is hydride or a hydrocarbon group, x has a value of 0,1 or 2; m has a value of 0.01 to 0.97, n has a value of 0.01 to 0.97, o has a value of 0.01 to 0.97, p has a value of 0.01 to 0.97, and m + n + o + p = 1. The resins are cured when baked at elevated temperatures. Alternatively, the compositions may comprise a free radical initiator or other additives such as thermal or photo acids and bases to improve the cure profile of the resin. In addition, the presence of a hydride group in the silsesquioxane resin is essential for the desired strip-ability as a 193nm ARC material.

    摘要翻译: 本发明涉及可用于抗反射涂层中的倍半硅氧烷树脂,其中倍半硅氧烷树脂具有式(PhSiO(3-x)/ 2(OR')x)m(HSiO(3-x)/ 2(OR')x)n 其中Ph是苯基Me是甲基,R选自反应性有机基团(例如甲基,乙基,丙基,异丁基,叔丁基, 官能团或可固化基团,R'是氢化物或烃基,x具有0.1或2的值; m的值为0.01〜0.97,n的值为0.01〜0.97,o的值为0.01〜0.97,p的值为0.01〜0.97,m + n + o + p = 1。 在高温下烘烤时固化。 或者,组合物可以包含自由基引发剂或其他添加剂,例如热或光酸和碱以改善树脂的固化分布。 另外,在倍半硅氧烷树脂中存在氢化物基团对于作为193nm ARC材料的期望的剥离能力是必不可少的。

    ANTIREFLECTIVE COATING MATERIAL
    6.
    发明公开
    ANTIREFLECTIVE COATING MATERIAL 审中-公开
    抗反射涂层材料

    公开(公告)号:EP1989593A2

    公开(公告)日:2008-11-12

    申请号:EP06847526.8

    申请日:2006-12-07

    IPC分类号: G03F7/075

    摘要: Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO (3-x) /2 (OH) x) mHSiO (3-x) /2 (OH) x) n (MeSiO (3-x) /2 (OH) x) p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m + n + p = 1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronique device.