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公开(公告)号：EP2702840A1
公开(公告)日：2014-03-05
申请号：EP12716242.8
申请日：2012-04-16
CPC分类号： H05H1/2406 , H05H1/42 , H05H1/46 , H05H1/48 , H05H2001/2418 , H05H2001/4697 , H05H2245/123
摘要： A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas, usually comprising helium, to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomised or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The velocity of the process gas flowing past the electrode is less than 100 m/s. Process gas is also injected into the dielectric housing at a velocity greater than 100m/s. The volume ratio of process gas injected at a velocity greater than 100m/s to process gas flowing past the electrode at less than 100 m/s is from 1 :20 to 5:1.
摘要翻译： 等离子体处理衬底的方法包括向位于具有入口和出口的绝缘外壳内的至少一个电极施加射频高电压，同时使通常包含氦气的处理气体从入口经过电极流动到 从而产生非平衡大气压等离子体。 雾化或气态表面处理剂被掺入非平衡大气压等离子体中。 衬底定位在等离子体出口附近，使得表面与等离子体接触并相对于等离子体出口移动。 流过电极的处理气体的速度小于100m / s。 工艺气体也以大于100m / s的速度注入绝缘外壳中。 以大于100m / s的速度注入的工艺气体与以小于100m / s流过电极的工艺气体的体积比为1：20至5：1。
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公开(公告)号：EP2777367A1
公开(公告)日：2014-09-17
申请号：EP12781043.0
申请日：2012-11-02
发明人： GAUDY, Thomas , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent , ASAD, Syed Salman , MASSINES, Francoise
CPC分类号： C23C16/50 , H05H1/2406 , H05H1/42 , H05H1/48 , H05H2001/2418 , H05H2245/123
摘要： An apparatus for plasma treating a substrate comprises a high voltage source of frequency 3kHz to 30kHz connected to at least one needle electrode (11) positioned within a channel (16) inside a dielectric housing (14) having an inlet for process gas and an outlet. The channel (16) has an entry (16a) which forms the said inlet for process gas and an exit (16e) into the dielectric housing arranged so that process gas flows from the inlet through the channel (16) past the electrode (11) to the outlet of the dielectric housing. The apparatus includes means for introducing an atomised surface treatment agent in the dielectric housing, and support means (27, 28) for the substrate (25) adjacent to the outlet of the dielectric housing. The needle electrode (11) extends from the channel entry (16a) to a tip (11t) close to the exit (16e) of the channel and projects outwardly from the channel (16) so that the tip (11t) of the needle electrode is positioned in the dielectric housing close to the exit (16e) of the channel at a distance outside the channel of at least 0.5mm up to 5 times the hydraulic diameter of the channel. The channel (16) has a ratio of length to hydraulic diameter greater than 10:1.
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公开(公告)号：EP2596688A1
公开(公告)日：2013-05-29
申请号：EP11738967.6
申请日：2011-07-20
发明人： MASSINES, Françoise , GAUDY, Thomas , TOUTANT, Adrien , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent
IPC分类号： H05H1/24
CPC分类号： B05D1/62 , C23C16/509 , H05H1/2406 , H05H1/42 , H05H2001/2412 , H05H2240/10 , H05H2240/20
摘要： A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomised or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The flow of process gas and the gap between the plasma outlet and the substrate are controlled so that the process gas has a turbulent flow regime within the dielectric housing.
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