公开(公告)号：EP3377673A1

公开(公告)日：2018-09-26

申请号：EP16866871.3

申请日：2016-11-09

申请人： AGC Flat Glass North America, Inc. ,  Asahi Glass Co., Ltd. ,  AGC Glass Europe

发明人： CHAMBERS, John ,  MASCHWITZ, Peter

IPC分类号： C23C16/455 ,  B01J19/08 ,  B05D3/06 ,  B05D3/14 ,  B05D7/00

CPC分类号： H05H1/44 ,  C03C17/001 ,  C03C2218/153 ,  C23C16/50 ,  H05H1/00 ,  H05H2245/123

摘要： A plasma source and method of producing a plasma are provided. The plasma source includes at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third hollow cathode, each hollow cathode having a plasma exit region. The plasma source includes a source of power capable of producing multiple output waves, including a first output wave, a second output wave, and a third output wave, wherein the first output wave and the second output wave are out of phase, the second output wave and the third output wave are out of phase, and the first output wave and the third output wave are out of phase. Each hollow cathode is electrically connected to the source of power such that the first hollow cathode is electrically connected to the first output wave, the second hollow cathode is electrically connected to the second output wave, and the third is electrically connected to the third output wave.

公开(公告)号：EP3326193A1

公开(公告)日：2018-05-30

申请号：EP16830965.6

申请日：2016-05-12

申请人： Applied Materials, Inc.

发明人： WANG, Rongping ,  ZENG, Jibing ,  HOU, David Muquing ,  COX, Michael S. ,  YUAN, Zheng ,  L'HEUREUX, James

IPC分类号： H01J37/32 ,  C23C16/44

CPC分类号： H05H1/2406 ,  H01J37/3211 ,  H01J37/32348 ,  H01J2237/022 ,  H01J2237/327 ,  H01J2237/335 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4667 ,  H05H2245/1225 ,  H05H2245/123

摘要： Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

公开(公告)号：EP3262210A1

公开(公告)日：2018-01-03

申请号：EP16707892.2

申请日：2016-02-10

申请人： Sidel Participations

发明人： DEAU, Thierry

IPC分类号： C23C16/04 ,  C23C16/511 ,  C23C16/52 ,  G01N25/00 ,  G01N21/84 ,  G01N21/90 ,  B05D7/22 ,  B29C59/14 ,  H01J37/32 ,  H05H1/24 ,  G01B11/06

CPC分类号： C23C16/52 ,  B05D1/62 ,  B05D7/02 ,  B05D7/20 ,  B29C59/142 ,  C23C16/045 ,  C23C16/26 ,  C23C16/511 ,  G01N21/8422 ,  G01N21/9081 ,  G01N25/72 ,  H01J37/32192 ,  H01J37/32394 ,  H01J37/32816 ,  H01J37/3299 ,  H05H2001/4607 ,  H05H2245/123

摘要： Process for treating a container (2) with plasma, for depositing a barrier layer on an internal face of the container (2), this process comprising operations consisting in: after the plasma has been extinguished, obtaining a thermal image of the container (2); comparing the thermal image of the container with a reference thermal image stored in memory; and, if the thermal image of the container (2) differs from the reference thermal image, modifying at least one of the following parameters: internal pressure, external pressure, precursor gas flow rate, microwave frequency, microwave power, duration of the treatment.

公开(公告)号：EP2653586B1

公开(公告)日：2016-03-02

申请号：EP11848774.3

申请日：2011-11-25

申请人： Kabushiki Kaisha Kobe Seiko Sho

发明人： TAMAGAKI, Hiroshi ,  OKIMOTO, Tadao

IPC分类号： C23C16/503 ,  C23C16/54 ,  H05H1/46 ,  H01J37/32

CPC分类号： C23C16/50 ,  C23C16/4588 ,  C23C16/503 ,  C23C16/54 ,  H01J37/32018 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32752 ,  H01J37/32761 ,  H01J37/3277 ,  H01J2237/3321 ,  H05H1/46 ,  H05H2245/123

公开(公告)号：EP1441577A4

公开(公告)日：2008-08-20

申请号：EP03706982

申请日：2003-02-20

申请人： MATSUSHITA ELECTRIC WORKS LTD ,  HAIDEN LAB INC

发明人： TAGUCHI NORIYUKI ,  SAWADA YASUSHI ,  MATSUNAGA KOHICHI

IPC分类号： H05H1/24 ,  C23C16/509 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2462 ,  H05H2245/123

摘要： A plasma processing device and a plasma processing method capable of maintaining stable plasma discharge, obtaining a sufficient plasma processing ability, and lowering the plasma temperature. The plasma processing device includes a plurality of electrodes, between which a discharge space is formed. A dielectric body is arranged at the discharge space side of at least one of the electrodes. A plasma generating gas is supplied to the discharge space and voltage is applied between the electrodes, so that discharge is caused in the discharge space under a pressure in the vicinity of the atmospheric pressure and plasma generated by this discharge is blown from the discharge space. In this plasma processing device, a waveform of the voltage applied between the electrodes is an alternating voltage waveform having no halt time. At least one of the rise time and the fall time of this alternating voltage waveform is set to 100 microseconds or below, the repetitious frequency is set to 0.5 to 1000 kHz, and the electric field intensity applied between the electrodes is set to 0.5 to 200 kV/cm.

公开(公告)号：EP1441577A1

公开(公告)日：2004-07-28

申请号：EP03706982.0

申请日：2003-02-20

申请人： Matsushita Electric Works, Ltd. ,  Haiden Laboratory Inc.

发明人： TAGUCHI, Noriyuki, Matsushita Electric Works,Ltd. ,  SAWADA, Yasushi, Matsushita Electric Works, Ltd. ,  MATSUNAGA, Kohichi, Haiden Laboratory Inc.

IPC分类号： H05H1/24 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/509

CPC分类号： H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2462 ,  H05H2245/123

摘要： A plasma treatment apparatus and method are provided, which have the capability of maintaining a stable discharge, achieving a sufficient plasma treatment, and reducing plasma temperature. In this apparatus, electrodes are arranged to define a discharge space therebetween, and a dielectric material is disposed at a discharge-space side of at least one of the electrodes. A voltage is applied between the electrodes, while a plasma generation gas being supplied into the discharge space, to develop the discharge in the discharge space under a pressure substantially equal to atmospheric pressure, and provide the plasma generated by the discharge from the discharge space. A waveform of the voltage applied between the electrodes is an alternating voltage waveform without rest period. At least one of rising and falling times of the alternating voltage waveform is 100 µsec or less. A repetition frequency is in a range of 0.5 to 1000 kHz. An electric-field intensity applied between the electrodes is in a range of 0.5 to 200 kV/cm.

摘要翻译： 提供了具有保持稳定放电，实现足够的等离子体处理和降低等离子体温度的能力的等离子体处理装置和方法。 在该装置中，电极被布置为在其间限定放电空间，并且介电材料设置在至少一个电极的放电空间侧。 在电极之间施加电压，同时将等离子体产生气体供给到放电空间中，以在基本上等于大气压的压力下在放电空间中产生放电，并且提供通过从放电空间的放电产生的等离子体。 在电极之间施加的电压的波形是没有休止期的交流电压波形。 交流电压波形的上升和下降时间中的至少一个为100μsec以下。 重复频率在0.5至1000kHz的范围内。 施加在电极之间的电场强度在0.5〜200kV / cm的范围内。

公开(公告)号：EP0921713A3

公开(公告)日：1999-08-11

申请号：EP98122873.7

申请日：1998-12-02

申请人： Matsushita Electric Works, Ltd.

发明人： Sawada, Yasushi ,  Yamazaki, Keiichi ,  Inoue, Yoshitami ,  Okazaki, Sachiko ,  Kogoma, Masuhiro

IPC分类号： H05H1/28 ,  H01J37/32

CPC分类号： H01J37/32366 ,  H05H1/2406 ,  H05H2001/245 ,  H05H2245/123

摘要： A plasma processing apparatus (K1-K4) for performing plasma processing of an article (7), comprising: a central electrode (3); a tubular outer electrode (1) which is provided so as to surround the central electrode (3); a tubular reaction pipe (2) which is disposed between the central electrode (3) and the outer electrode (1) so as to electrically insulate the central electrode (3) and the outer electrode (1) from each other; a gas supply device (56) for supplying a plasma producing gas to a discharge space (22) defined between the central electrode (3) and the outer electrode (1) in the reaction pipe (2); an AC power source (17) for applying an AC voltage between the central electrode (3) and the outer electrode (1); wherein not only the plasma producing gas is supplied to the discharge space (22) by the gas supply device (56) but the AC voltage is applied between the central electrode (3) and the outer electrode (1) by the AC power source (17) so as to generate a glow discharge in the discharge space (22) under atmospheric pressure such that a plasma jet (55) is blown to the article (7) from a blow-off outlet (21) of the reaction pipe (2); and a cooling device (27, 28, 34, 35, 51) for cooling the central electrode (3) and the outer electrode (1).

摘要翻译： 一种用于进行制品（7）的等离子体处理的等离子体处理装置（K1-K4），包括：中心电极（3）; 设置成围绕中心电极（3）的管状外电极（1）; 管状反应管（2），设置在中心电极（3）与外电极（1）之间，以使中心电极（3）和外电极（1）彼此电绝缘; 用于将等离子体产生气体供给到在反应管（2）中限定在中心电极（3）和外电极（1）之间的放电空间（22）的气体供应装置（56）; 用于在中心电极（3）和外电极（1）之间施加AC电压的AC电源（17）; 其特征在于，不仅通过气体供给装置（56）将等离子体产生气体供给到放电空间（22），而且通过交流电源将交流电压施加在中心电极（3）和外部电极（1）之间 17），以在大气压下在放电空间（22）中产生辉光放电，使得等离子体射流（55）从反应管（2）的吹出口（21）吹送到制品（7） ）; 以及用于冷却中心电极（3）和外电极（1）的冷却装置（27,28,34,35,51）。

公开(公告)号：EP0921713A2

公开(公告)日：1999-06-09

申请号：EP98122873.7

申请日：1998-12-02

申请人： Matsushita Electric Works, Ltd.

发明人： Sawada, Yasushi ,  Yamazaki, Keiichi ,  Inoue, Yoshitami ,  Okazaki, Sachiko ,  Kogoma, Masuhiro

IPC分类号： H05H1/28 ,  H01J37/32

CPC分类号： H01J37/32366 ,  H05H1/2406 ,  H05H2001/245 ,  H05H2245/123

摘要： A plasma processing apparatus (K1-K4) for performing plasma processing of an article (7), comprising: a central electrode (3); a tubular outer electrode (1) which is provided so as to surround the central electrode (3); a tubular reaction pipe (2) which is disposed between the central electrode (3) and the outer electrode (1) so as to electrically insulate the central electrode (3) and the outer electrode (1) from each other; a gas supply device (56) for supplying a plasma producing gas to a discharge space (22) defined between the central electrode (3) and the outer electrode (1) in the reaction pipe (2); an AC power source (17) for applying an AC voltage between the central electrode (3) and the outer electrode (1); wherein not only the plasma producing gas is supplied to the discharge space (22) by the gas supply device (56) but the AC voltage is applied between the central electrode (3) and the outer electrode (1) by the AC power source (17) so as to generate a glow discharge in the discharge space (22) under atmospheric pressure such that a plasma jet (55) is blown to the article (7) from a blow-off outlet (21) of the reaction pipe (2); and a cooling device (27, 28, 34, 35, 51) for cooling the central electrode (3) and the outer electrode (1).

摘要翻译： 一种等离子体处理装置（K1-K4），用于对物品（7）进行等离子体处理，该等离子体处理装置包括：中心电极（3）;以及中心电极 以包围中心电极（3）的方式设置的筒状的外部电极（1） 设置在中心电极（3）和外部电极（1）之间以使中心电极（3）和外部电极（1）彼此电绝缘的管状反应管（2） （2）中的中心电极（3）和外部电极（1）之间的放电空间（22）供给等离子体生成气体的气体供给装置（56）。 交流电源（17），用于在中心电极（3）和外部电极（1）之间施加交流电压; 其中不仅通过气体供应装置（56）将等离子体产生气体供应到放电空间（22），而且AC电压通过AC电源施加在中心电极（3）和外部电极（1）之间 17），以便在大气压下在放电空间（22）中产生辉光放电，使得等离子体射流（55）从反应管（2）的吹出口（21）吹向制品 ）; 以及用于冷却中心电极（3）和外部电极（1）的冷却装置（27,28,34,35,51）。

公开(公告)号：EP2543443A4

公开(公告)日：2017-07-05

申请号：EP11750780

申请日：2011-03-03

申请人： IMAGINEERING INC

发明人： IKEDA YUJI

IPC分类号： B05B7/20 ,  B05B7/22 ,  B05B13/02 ,  B05D1/02 ,  B05D1/34 ,  B05D3/04 ,  H05H1/46 ,  H05H1/52

CPC分类号： B05B7/228 ,  B05B7/205 ,  B05B13/0228 ,  B05D1/02 ,  B05D3/141 ,  H05H1/46 ,  H05H1/52 ,  H05H2001/463 ,  H05H2245/123

摘要： A coat forming apparatus 100 includes a droplet supply unit 110 and an active species supply unit 120. The droplet supply unit 110 is adapted to spray or drop a droplet for coat forming toward an object 116. The active species supply unit 120 is adapted to supply an active species to be brought into contact with the droplet moving from the droplet supply unit 110 toward the object 116. The coating is formed on a surface of the object 116 by the droplet that has been brought into contact with the active species.

摘要翻译： 涂层形成设备100包括液滴供应单元110和活性物质供应单元120.液滴供应单元110适于将用于涂层形成的液滴喷向或滴落到物体116.活性物质供应单元120适于供应 要与从液滴供应单元110朝向物体116移动的液滴接触的活性物质。涂层通过已经与活性物质接触的液滴形成在物体116的表面上。

公开(公告)号：EP2946641B1

公开(公告)日：2016-12-07

申请号：EP14703022.5

申请日：2014-01-02

申请人： Cinogy GmbH

发明人： TRUTWIG, Leonhard ,  STORCK, Karl-Otto ,  WANDKE, Dirk ,  KOPP, Matthias ,  DÄSCHLEIN, Georg

IPC分类号： H05H1/24 ,  A61L2/14

CPC分类号： H01J37/32348 ,  A61L2/14 ,  A61L2202/16 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2418 ,  H05H2001/2431 ,  H05H2245/1225 ,  H05H2245/123