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    ORGANIC LIGHT EMITTING AMBIPOLAR FIELD EFFECT TRANSISTOR WITH DISTRIBUTED LIGHT EMISSION
    10.
    发明公开
    ORGANIC LIGHT EMITTING AMBIPOLAR FIELD EFFECT TRANSISTOR WITH DISTRIBUTED LIGHT EMISSION 有权
    有机发光WITH分布式发光双极场效应晶体管

    公开(公告)号：EP2786437A1

    公开(公告)日：2014-10-08

    申请号：EP13716411.7

    申请日：2013-02-21

    申请人： E.T.C. S.r.l.

    发明人： CAPELLI, Raffaella ,  TOFFANIN, Stefano ,  GENERALI, Gianluca ,  MUCCINI, Michele

    IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/00

    CPC分类号： H01L51/5296 ,  H01L51/0025 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/5004 ,  H01L51/5024 ,  H01L2251/552

    摘要： An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination, comprises: a gate electrode, a dielectric layer superposed to said gate electrode, an ambipolar channel superposed to said dielectric layer, comprising a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCp and lowest unoccupied molecular orbital LUMO-SCp, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCn and lowest unoccupied molecular orbital LUMO-SCn and a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between said P-type semiconductor layer and said N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contact with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.