公开(公告)号：EP3172778A1

公开(公告)日：2017-05-31

申请号：EP15745117.0

申请日：2015-07-24

申请人： E.T.C. S.r.l. ,  Polyera Corporation ,  Consiglio Nazionale Delle Ricerche (C.N.R.)

发明人： BIONDO, Viviana ,  GENERALI, Gianluca ,  STEFANI, Andrea ,  MUCCINI, Michele ,  TURATTI, Guido ,  DENTI, Mitchell ,  USTA, Hakan ,  CHEN, Xiaoyan ,  FACCHETTI, Antonio

IPC分类号： H01L51/52 ,  H01L51/54 ,  H01L51/00 ,  C07D495/04

CPC分类号： H01L51/5296 ,  C07D495/04 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/0562 ,  H01L51/5012 ,  H01L51/5016 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/305 ,  H01L2251/308

摘要： The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

摘要翻译： 本发明涉及具有改善的发光特性的有机电致发光晶体管。 更具体地，本发明的有机电致发光晶体管具有发射双极通道，其包括至少一层n型半导体材料，至少一层p型半导体材料，以及至少一层发光材料层， p型和n型半导体材料的层，其中多层发射双极通道在各层中包括包含苯并噻吩并苯并噻吩化合物的p型半导体材料层和/或发射材料层 包括作为主体基质化合物的有机咔唑衍生物和作为客体发射体的铱络合物的混合材料。

公开(公告)号：EP2659527A1

公开(公告)日：2013-11-06

申请号：EP11801743.3

申请日：2011-12-22

申请人： E.T.C. S.r.l.

发明人： CAPELLI, Raffaella ,  TOFFANIN, Stefano ,  BENFENATI, Valentina ,  MUCCINI, Michele ,  ZAMBONI, Roberto ,  GENERALI, Gianluca

IPC分类号： H01L51/00 ,  G01N33/487

CPC分类号： G01N33/4833 ,  C12N13/00 ,  G01N27/4145 ,  G01N33/48728 ,  H01L51/0053 ,  H01L51/0508 ,  H01L51/0558 ,  H01L51/5296

摘要： The present invention relates to a device comprising an organic field effect transistor (OFET) with charge injecting contacts containing a semiconductor layer formed by a perylene derivative, to uses of said device as a medical sensor and/or as a medical cell stimulator and to methods of stimulating and/or monitoring biological cellular activity by using said device.

公开(公告)号：EP3172778B1

公开(公告)日：2018-10-03

申请号：EP15745117.0

申请日：2015-07-24

申请人： E.T.C. S.r.l. ,  Flexterra, Inc.

发明人： BIONDO, Viviana ,  GENERALI, Gianluca ,  STEFANI, Andrea ,  MUCCINI, Michele ,  TURATTI, Guido ,  DENTI, Mitchell ,  USTA, Hakan ,  CHEN, Xiaoyan ,  FACCHETTI, Antonio

IPC分类号： H01L51/54 ,  C07D495/04 ,  H01L51/52

CPC分类号： H01L51/5296 ,  C07D495/04 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/0562 ,  H01L51/5012 ,  H01L51/5016 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/305 ,  H01L2251/308

摘要： The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

公开(公告)号：EP2659527B1

公开(公告)日：2014-05-14

申请号：EP11801743.3

申请日：2011-12-22

申请人： E.T.C. S.r.l.

发明人： CAPELLI, Raffaella ,  TOFFANIN, Stefano ,  BENFENATI, Valentina ,  MUCCINI, Michele ,  ZAMBONI, Roberto ,  GENERALI, Gianluca

IPC分类号： H01L51/05 ,  H01L51/00 ,  G01N33/487

CPC分类号： G01N33/4833 ,  C12N13/00 ,  G01N27/4145 ,  G01N33/48728 ,  H01L51/0053 ,  H01L51/0508 ,  H01L51/0558 ,  H01L51/5296

公开(公告)号：EP2786437B1

公开(公告)日：2015-03-25

申请号：EP13716411.7

申请日：2013-02-21

申请人： E.T.C. S.r.l.

发明人： CAPELLI, Raffaella ,  TOFFANIN, Stefano ,  GENERALI, Gianluca ,  MUCCINI, Michele

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L51/5296 ,  H01L51/0025 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/5004 ,  H01L51/5024 ,  H01L2251/552

公开(公告)号：EP3218945A1

公开(公告)日：2017-09-20

申请号：EP15820341.4

申请日：2015-11-13

申请人： E.T.C. S.r.l. ,  Flexterra, Inc.

发明人： MUCCINI, Michele ,  GENERALI, Gianluca ,  D'ALPAOS, Riccardo ,  FACCHETTI, Antonio ,  HSIAO, Chung-Chin ,  LIEN, Hugh

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L27/3262 ,  H01L27/3274 ,  H01L51/5271 ,  H01L51/5296

摘要： The invention relates to improved Organic Light Emitting Transistor (OLET) pixel architecture for OLET based displays.

摘要翻译： 本发明涉及用于基于OLET的显示器的改进的有机发光晶体管（OLET）像素体系结构。

公开(公告)号：EP2786437A1

公开(公告)日：2014-10-08

申请号：EP13716411.7

申请日：2013-02-21

申请人： E.T.C. S.r.l.

发明人： CAPELLI, Raffaella ,  TOFFANIN, Stefano ,  GENERALI, Gianluca ,  MUCCINI, Michele

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L51/5296 ,  H01L51/0025 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/5004 ,  H01L51/5024 ,  H01L2251/552

摘要： An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination, comprises: a gate electrode, a dielectric layer superposed to said gate electrode, an ambipolar channel superposed to said dielectric layer, comprising a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCp and lowest unoccupied molecular orbital LUMO-SCp, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCn and lowest unoccupied molecular orbital LUMO-SCn and a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between said P-type semiconductor layer and said N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contact with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.