公开(公告)号：EP0686995A1

公开(公告)日：1995-12-13

申请号：EP95304036.7

申请日：1995-06-12

申请人： EATON CORPORATION

发明人： Hirokawa, Suguru ,  Sinclair, Frank ,  DeMario, Neil Evan

IPC分类号： H01J37/317 ,  H01J37/304

CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/202 ,  H01J2237/31703 ,  H01L21/68764 ,  H01L21/68771

摘要： An ion implantation device equipped with a high-speed driving device 16 which causes rotation of the a disk 15 that supports semiconductor wafers 25 around it outer periphery. A center position of said disk is the axis of said rotation of the high speed rotation. A low-speed driving device 17 causes relative movement of the disk in a radial direction. The ion implantation device further has a control means which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance R from the center of the disk to the ion implantation position, and controls said low speed scan speed V so that ions are uniformly implanted into the aforementioned wafers.

摘要翻译： 一种配备有高速驱动装置16的离子注入装置，其使围绕其外周的半导体晶片25支撑的盘15旋转。 所述盘的中心位置是高速旋转的所述旋转的轴线。 低速驱动装置17使盘的径向相对移动。 离子注入装置还具有控制装置，该控制装置根据围绕外周的晶片间的距离以及从盘的中心到离子注入位置的距离R来计算上述低速驱动装置的移动速度，以及 控制所述低速扫描速度V，使得离子均匀地注入上述晶片。