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公开(公告)号：EP0738684B1
公开(公告)日：1998-12-30
申请号：EP96105965.6
申请日：1996-04-16
申请人： EBARA CORPORATION
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公开(公告)号：EP0703187A3
公开(公告)日：1999-11-10
申请号：EP95113254.7
申请日：1995-08-23
发明人： Harada, Minoru , Shinjo, Ryoichi , Tsujimura, Manabu , Nakata, Rempei , Miyazaki, Kunihiro , Kaji, Naruhiko , Nakano, Yutaka
CPC分类号： C23C16/448 , C01B13/10 , C01B13/11 , C01B2201/60 , C23C8/12 , C23C16/402 , C23C16/4402
摘要： Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices. Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10 - 20 vol% of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
摘要翻译： 臭氧发生器（10），它在高电压的应用中的进料气体供给到臭氧发生单元（11），并且通过在臭氧气体输送路径（由管（14）和（15）的），因为它已被输送到臭氧气体 在所述臭氧发生电解池（11）中产生在没有臭氧气体输送路径配有用于去除NOx，HF和SO x中的至少一个的特征在于（在附图中，所述装置是用于除去NO x）和没有臭氧气体 从臭氧发生电解池（11）通过所述传递去除装置，借此的NOx，SOx和HF所述臭氧气体中的至少一个之前被输送到随后的阶段被去除。 将产物臭氧不沾在所有铬化合物或不充分地污染，以使在高度集成的半导体器件的制造中的任何实际问题。 可替代地，臭氧发生器（10），其包括具有在入口（8），用于提供进料气体，高电压施加装置（35）和在出口（29）用于排出所述臭氧产生的臭氧发生电解池（11），和臭氧输送路径 （30）和（31），用于输送所产生的臭氧，其特征在于补充有10 DASS氧气（1） - 二氧化碳和/或一氧化碳的20体积％（2）被用作进料气体。 这样产生的臭氧是在铬化合物的水平显着较低，因此，可适用于形成金属氧化物，特别是，氧化硅使用。
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公开(公告)号：EP0738684A1
公开(公告)日：1996-10-23
申请号：EP96105965.6
申请日：1996-04-16
申请人： EBARA CORPORATION
发明人： Kaji, Naruhiko , Nakano, Yutaka , Nakata, Rempei , Harada, Minoru , Shinjo, Ryoichi , Tsujimura, Manabu
摘要： An ozone generating apparatus for producing highly pure ozone gas which can be used in the semiconductor manufacturing process. The ozone generating apparatus comprises a high voltage source, an ozone generating cell which generates ozone gas by supplying a material gas while applying a high voltage from the high voltage source, and a passage for delivering the generated ozone gas from the ozone generating cell to a desired location. The passage comprises a material which has a passivation film formed by a passivation treatment in a dry process. The oxide passivation film comprises chromium oxide film, iron oxide film or a composite film of chromium oxide and iron oxide.
摘要翻译： 一种用于生产高纯度臭氧气体的臭氧发生装置，其可用于半导体制造过程。 臭氧发生装置包括高电压源，臭氧发生电池，其通过在施加来自高电压源的高电压的同时供给材料气体而产生臭氧气体，以及用于将产生的臭氧气体从臭氧发生电池输送到 理想位置。 该通道包括具有通过在干法中钝化处理形成的钝化膜的材料。 氧化物钝化膜包括氧化铬膜，氧化铁膜或氧化铬和氧化铁的复合膜。
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公开(公告)号：EP0703187B1
公开(公告)日：2006-06-14
申请号：EP95113254.7
申请日：1995-08-23
发明人： Harada, Minoru , Shinjo, Ryoichi , Tsujimura, Manabu , Nakata, Rempei , Miyazaki, Kunihiro , Kaji, Naruhiko , Nakano, Yutaka
CPC分类号： C23C16/448 , C01B13/10 , C01B13/11 , C01B2201/60 , C23C8/12 , C23C16/402 , C23C16/4402
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公开(公告)号：EP0703187A2
公开(公告)日：1996-03-27
申请号：EP95113254.7
申请日：1995-08-23
发明人： Harada, Minoru , Shinjo, Ryoichi , Tsujimura, Manabu , Nakata, Rempei , Miyazaki, Kunihiro , Kaji, Naruhiko , Nakano, Yutaka
CPC分类号： C23C16/448 , C01B13/10 , C01B13/11 , C01B2201/60 , C23C8/12 , C23C16/402 , C23C16/4402
摘要： Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices.
Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10 - 20 vol% of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
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