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公开(公告)号：EP0181113A2
公开(公告)日：1986-05-14
申请号：EP85307589.3
申请日：1985-10-21
IPC分类号： H01L21/205 , H01L31/02 , G03G5/04
CPC分类号： H01L31/206 , G03G5/08264 , G03G5/08278 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An improved p-type semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and radio frequency and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially mono-atomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in a glow discharge plasma.
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2.发明公开Method of creating a high flux of activated species for reaction with a remotely located substrate 失效一种生产用于与位于远程的底物反应活性颗粒的高流动性的方法。
公开(公告)号：EP0343355A1
公开(公告)日：1989-11-29
申请号：EP89106375.2
申请日：1989-04-11
发明人： Doehler, Joachim , Hudgens, Stephen , Ovshinsky, Stanford , Dotter II, Buddy , Peedin, Lester , Krisko, Jeffrey , Krisko, Annette
IPC分类号： C23C16/30 , H01L21/205
CPC分类号： C23C16/4551 , C23C16/452 , C23C16/455 , C23C16/45514 , Y10S505/741
摘要： A method of forming a high flux of activated species (34), such as ions, of an energy transferring gas (A) by employing a substantial pressure differential between the pressure adjacent the aperture (26) in a first conduit (24) through which the energy transferring gas is introduced into a vacuumized enclosure (12) and the background pressure which exists in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit (60), for forming deposition/etchant species (65) therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate (50).
摘要翻译： 形成活化物质的高通量（34）的方法：例如通过在第一导管（24），通过该用人压力邻近所述孔（26）之间的显着的压力差的离子的能量转移环气体（A）的， 的能量传递气体环引入到抽真空的外壳（12）和在所述外壳所存在的背景压力。 在一个，实施方式流过所述第一管道中的能量传递环气体的流动速率，当与所述压力差动结合附图，使能量传递环气体的活化物质的高通量与前体沉积/蚀刻剂气体碰撞，远程 通过第二导管（60），用于从形成的沉积/蚀刻剂物质（65）有引入罩壳。 在一个替代实施例中，压力差导致这些活性种，自己，在被要么沉积或从远程定位的基板（50）的表面蚀刻掉。
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3.发明授权Method of creating a high flux of activated species for reaction with a remotely located substrate 失效一种生产用于与位于远程的底物反应活性颗粒的高流动性的方法。
公开(公告)号：EP0343355B1
公开(公告)日：1993-12-15
申请号：EP89106375.2
申请日：1989-04-11
发明人： Doehler, Joachim , Hudgens, Stephen , Ovshinsky, Stanford , Dotter II, Buddy , Peedin, Lester , Krisko, Jeffrey , Krisko, Annette
IPC分类号： C23C16/30 , H01L21/205
CPC分类号： C23C16/4551 , C23C16/452 , C23C16/455 , C23C16/45514 , Y10S505/741
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