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15 条记录 (耗时 0.018 秒)

    Low temperature, plasma method of making plasma deposited coatings
    1.
    发明公开
    Low temperature, plasma method of making plasma deposited coatings 失效
    等离子体处理通过在低温下的等离子体放电层的装置产生的制剂。

    公开(公告)号：EP0284693A2

    公开(公告)日：1988-10-05

    申请号：EP87310966.4

    申请日：1987-12-14

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Hudgens, Stephen J. ,  Johncock, Annette G. ,  Ovshinsky, Stanford R. ,  Nath, Prem

    IPC分类号： C23C16/50 ,  C23C16/30

    CPC分类号： H01J37/32192 ,  B32B17/10018 ,  B32B2375/00 ,  C23C16/30 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32275 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262

    摘要： A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.

    摘要翻译： 沉积氢上的基片基本上不含或控制氢含量多元素合金电影的方法。 该方法利用无氢前驱物气体的微波激发的等离子体来沉积硬，粘附涂层。 该方法包括提供在真空沉积腔室待涂覆一个基底，与耦合到真空沉积室的微波能量的来源。 甲基本上不含氢气的反应气体前体组合物是在压力大致对应于最小的反应气体前体组合物的改性帕邢曲线的压力导入反应室中。 微波能量源的激活激发反应气体前体组合物，以这种方式形成在真空沉积室中的等离子体来沉积氢在衬底上基本上不含或控制氢含量多元素合金的电影。

    An improved method of making a photoconductive member and improved photoconductive members made thereby
    2.
    发明公开
    An improved method of making a photoconductive member and improved photoconductive members made thereby 失效
    制造光电子成员的改进方法和改进的光电子元件

    公开(公告)号：EP0151754A3

    公开(公告)日：1987-04-01

    申请号：EP84115397

    申请日：1984-12-13

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Johncock, Annette G. ,  Hudgens, Stephen J.

    IPC分类号： H01L31/18 ,  H01L31/08 ,  C23C16/50 ,  H01L31/02

    CPC分类号： C23C16/511 ,  H01L31/03762 ,  H01L31/095 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A process for making photoconductive semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates. The process includes coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing amorphous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer (38,48, 60, 72, 86, 96, 108, 120), a photoconductive layer (40, 60, 62, 74, 88, 98, 110, 122) and a top blocking layer (42, 52, 64,76, 90,100,112, 124). The photoconductive member can be formed in a negative or positive charge type configuration. The members can include a top blocking enhancement layer (54, 80, 102, 128) and/or an improved infrared photoresponsive layer (78, 126).

    Method and apparatus for making electrophotographic devices
    3.
    发明公开
    Method and apparatus for making electrophotographic devices 失效
    Verfahren und Vorrichtung zur Herstellung电子照相机Geräte。

    公开(公告)号：EP0154160A1

    公开(公告)日：1985-09-11

    申请号：EP85100997.7

    申请日：1985-01-31

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Fournier, Eugene ,  Bjornard, Erik J. ,  Johncock, Annette G. ,  Doehler, Joachim

    IPC分类号： C23C14/28 ,  C23C4/12 ,  H01L45/00 ,  H01L21/205 ,  H01L31/18

    CPC分类号： H01L21/67017 ,  C23C16/50 ,  G03G5/08235 ,  G03G5/08278 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244 ,  H01J2237/3325

    摘要： There are disclosed a method and apparatus (20, 110, 130) for depositing a layer of material onto the outer surfaces of a plurality of cylindrical members (12). The cylindrical members (12) are arranged to form a substantially closed loop with the longitudinal axes thereof disposed substantially parallel and the outer surfaces of adjacent members being closely spaced apart to form an inner chamber (32) which is substantially closed. Adjacent cylindrical members form narrow passages (66) which communicate with the inner chamber (32). At least one reaction gas is introduced into the Inner chamber (32) through at least one of the narrow passages (52) and a plasma is formed from the at least one reaction gas within the inner chamber (32) to deposit the layer of material onto the outer surfaces of the cylindrical members (12). The plasma can be formed by using either microwave energy or radio frequency energy. More particularly disclosed is a method and apparatus for making electrophotographic drums.

    摘要翻译： 公开了一种用于在多个圆柱形构件（12）的外表面上沉积材料层的方法和装置（20,110,130）。 圆柱形构件（12）被布置成形成基本上闭合的环，其纵向轴线基本上平行，并且相邻构件的外表面紧密间隔开以形成基本封闭的内腔（32）。 相邻的圆柱形构件形成与内室（32）连通的窄通道（66）。 至少一个反应气体通过至少一个窄通道（52）引入内室（32），并且等离子体由内室（32）内的至少一个反应气体形成，以沉积材料层 到圆柱形构件（12）的外表面上。 等离子体可以通过使用微波能量或射频能量来形成。 更具体地公开了一种用于制造电子照相鼓的方法和装置。

    Microwave system and method of making semi-conductor members and improved semi-conductive members made thereby
    6.
    发明公开
    Microwave system and method of making semi-conductor members and improved semi-conductive members made thereby 失效
    制造半导体器件的MICROWAVE系统及其改进的半导体元件的方法

    公开(公告)号：EP0204907A3

    公开(公告)日：1987-08-26

    申请号：EP86104253

    申请日：1986-03-27

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Johncock, Annette G. ,  Hudgens, Stephen J.

    IPC分类号： C23C16/50

    CPC分类号： H01J37/32192 ,  C23C16/511 ,  G03G5/08235 ,  G03G5/08278 ,  H01L31/095 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A process and system for making semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor elememt and the potential of the plasma is controlled to alter the ion bombardment of the depositing species. The process and system include coupling microwave energy into a substantially enclosed reaction vessel (12) containing a substrate (14) and depositing semiconductor alloys onto the substrate from a reaction gas introduced into the vessel. The semiconductor alloys are particularly suited for relatively thick photoconductive members 40,50,62,72). The photoconductive member includes at least a bottom blocking layer (44, 54, 66, 76) and a photoconductive layer (46, 56, 68, 78). The photoconductive member can be formed in a negative (62, 72) or positive (40, 50) charge type configuration. The members also can include a top blocking enhancement layer (60,82).

    Microwave system and method of making semi-conductor members and improved semi-conductive members made thereby
    7.
    发明公开
    Microwave system and method of making semi-conductor members and improved semi-conductive members made thereby 失效
    用于生产半导体组件和根据该方法的半导体部件的微波装置和方法。

    公开(公告)号：EP0204907A2

    公开(公告)日：1986-12-17

    申请号：EP86104253.9

    申请日：1986-03-27

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Johncock, Annette G. ,  Hudgens, Stephen J.

    IPC分类号： C23C16/50

    CPC分类号： H01J37/32192 ,  C23C16/511 ,  G03G5/08235 ,  G03G5/08278 ,  H01L31/095 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A process and system for making semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor elememt and the potential of the plasma is controlled to alter the ion bombardment of the depositing species.
    The process and system include coupling microwave energy into a substantially enclosed reaction vessel (12) containing a substrate (14) and depositing semiconductor alloys onto the substrate from a reaction gas introduced into the vessel. The semiconductor alloys are particularly suited for relatively thick photoconductive members 40,50,62,72). The photoconductive member includes at least a bottom blocking layer (44, 54, 66, 76) and a photoconductive layer (46, 56, 68, 78). The photoconductive member can be formed in a negative (62, 72) or positive (40, 50) charge type configuration. The members also can include a top blocking enhancement layer (60,82).

    摘要翻译： 一种用于制造半导体的合金和构件具有高的反应气体的转换效率和在高的沉积速率的方法和系统利用微波能量以形成等离子体沉积。 微波能量形式沉积物质和半导体Elememt的分子离子和等离子体的电势被控制，以改变沉积物质的离子轰击。 该方法和系统包括微波能量耦合到一个基本封闭的反应容器（12）包含一个基板（14）和沉积半导体合金到由引入到容器中的反应气体的基材。 半导体合金尤其适用于相对厚的光导构件40，50，62，72）。 感光构件至少包括底部阻挡层（44，54，66，76）和光电导层（46，56，68，78）。 感光构件可以为负（62，72）或阳性（40，50）的电荷类型的构造来形成。 因此，该部件可包括顶部阻挡阳城层（60，82）。