利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

74 条记录 (耗时 0.02 秒)

    Congruent state changeable optical memory material and device
    1.
    发明公开
    Congruent state changeable optical memory material and device 失效
    Anordnung und kongruenter Zustand optischänderbarenSpeichermaterials

    公开(公告)号：EP0951011A1

    公开(公告)日：1999-10-20

    申请号：EP99108310.6

    申请日：1992-02-14

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Strand, David A. ,  Ovshinsky, Stanford R.

    IPC分类号： G11B7/00 ,  G11B7/24 ,  H01L45/00

    CPC分类号： G11C13/04 ,  G11B7/00557 ,  G11B7/24 ,  G11B7/243 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11C7/005 ,  G11C13/047

    摘要： A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.

    摘要翻译： 一种状态可变记忆合金及其应用的装置。 记忆合金能够响应于能量的输入（例如投射的光束能量，电能或热能）而从第一状态变为第二状态。 当处于第一状态时，合金具有第一可检测特性，当处于第二状态时，具有第二可检测特性。 其特征还在于，第一状态包括单相，第二状态包括：（1）具有与第一相相同组成的单相或（2）具有基本相似的结晶温度的多相，以及 动力学。

    Thin film solar cell including a spatially modulated intrinsic layer
    3.
    发明公开
    Thin film solar cell including a spatially modulated intrinsic layer 失效
    Dünnschichtsolarzellemiträumlichmodulierter intrinsischer Schicht。

    公开(公告)号：EP0304145A2

    公开(公告)日：1989-02-22

    申请号：EP88304307.7

    申请日：1988-05-12

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Guha, Subhendu ,  Yang, Chi-Chung ,  Ovshinsky, Stanford R.

    IPC分类号： H01L31/06

    CPC分类号： H01L31/076 ,  H01L31/065 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

    摘要： One or more thin film solar cells (10) in which the intrinsic layer (18) of substantially amorphous semiconductor alloy material thereof includes at least a first bandgap portion and a narrower bandgap portion. The bandgap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer (16, 20) interfaces. The bandgap of the intrinsic layer is always less than the bandgap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

    摘要翻译： 一种或多种薄膜太阳能电池（10），其中基本上非晶半导体合金材料的本征层（18）至少包括第一带隙部分和较窄带隙部分。 本征层的带隙通过体积厚度的一部分在空间上分级，所述渐变部分包括从本征层 - 掺杂剂层（16,20）去除的区域界面。 本征层的带隙总是小于掺杂层的带隙。 实现本征层的灰度，使得一个或多个太阳能电池结构的开路电压和/或填充因子得到增强。

    Low temperature, plasma method of making plasma deposited coatings
    4.
    发明公开
    Low temperature, plasma method of making plasma deposited coatings 失效
    等离子体处理通过在低温下的等离子体放电层的装置产生的制剂。

    公开(公告)号：EP0284693A2

    公开(公告)日：1988-10-05

    申请号：EP87310966.4

    申请日：1987-12-14

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Hudgens, Stephen J. ,  Johncock, Annette G. ,  Ovshinsky, Stanford R. ,  Nath, Prem

    IPC分类号： C23C16/50 ,  C23C16/30

    CPC分类号： H01J37/32192 ,  B32B17/10018 ,  B32B2375/00 ,  C23C16/30 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32275 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262

    摘要： A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.

    摘要翻译： 沉积氢上的基片基本上不含或控制氢含量多元素合金电影的方法。 该方法利用无氢前驱物气体的微波激发的等离子体来沉积硬，粘附涂层。 该方法包括提供在真空沉积腔室待涂覆一个基底，与耦合到真空沉积室的微波能量的来源。 甲基本上不含氢气的反应气体前体组合物是在压力大致对应于最小的反应气体前体组合物的改性帕邢曲线的压力导入反应室中。 微波能量源的激活激发反应气体前体组合物，以这种方式形成在真空沉积室中的等离子体来沉积氢在衬底上基本上不含或控制氢含量多元素合金的电影。

    Thin film electrical devices with amorphous carbon electrodes and method of making same
    5.
    发明公开
    Thin film electrical devices with amorphous carbon electrodes and method of making same 失效
    具有由无定形碳，以及它们的制备方法的电极薄膜的电子电路。

    公开(公告)号：EP0269225A2

    公开(公告)日：1988-06-01

    申请号：EP87308723.3

    申请日：1987-10-01

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Pryor, Roger W. ,  Ovshinsky, Stanford R. ,  Formigoni, Napoleaon P.

    IPC分类号： H01L45/00 ,  H01L29/40 ,  H01L21/285

    CPC分类号： H01L45/04 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： Thin film electrical structures, such as threshold switching devices and phase change memory cells, preferably utilizing electrically stable, relatively inert, conductive electrodes including a non-single-crystal deposited film of carbon material, are disclosed. The film of carbon material, which preferably is amorphous and substantially pure, is disposed adjacent to a layer of active material such as an amorphous semiconductor, and serves to prevent undesired degradation of the active material, especially when the device is carrying appreciable current in its on-state. A method of making such structures with high quality interfaces between the semiconductor layer and the conductive carbon barrier layers adjacent thereto by successively depositing such layers in a continuously maintained partial vacuum is disclosed. The method may include a step performed in the vacuum for hermetically sealing all of, or at least the electrically switchable portion of, the active layer against subsequent contamination. Thin film structures suitable for threshold switching or memory applciations and employing insulating pores having substantially sloped side walls are also disclosed.

    摘要翻译： 薄膜电结构，：如阈值开关装置和相变存储器单元，优选利用电稳定的，相对惰性的，导电电极包括一个游离缺失非单晶膜沉积碳材料，是光盘。 碳材料，其优选是无定形的和基本上纯的，所述的膜被布置为邻近活性材料层：如在非晶半导体，并用于防止活性材料的不希望的降解，爱尤其当装置被携带在相当大的电流其 导通状态。 通过连续沉积各层寻求在连续制造搜索结构与所述半导体层和导电与其相邻的碳上的势垒层之间的高品质的接口的方法，保持部分真空是游离缺失盘。 该方法可以包括在真空中进行用于密封所有的步骤，或至少的电转换部分，对随后的污染的活性层。 适合于阈值开关或存储器applciations和采用具有基本上倾斜的侧壁绝缘细孔薄膜结构是如此游离缺失盘。

    Integrated circuit compatible thin film field effect transistor & method of making same
    6.
    发明公开
    Integrated circuit compatible thin film field effect transistor & method of making same 失效
    在集成电路中，薄膜场效应晶体管和方法适用于制备。

    公开(公告)号：EP0164541A2

    公开(公告)日：1985-12-18

    申请号：EP85105081.5

    申请日：1985-04-26

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Ovshinsky, Stanford R. ,  Hudgens, Stephen J.

    IPC分类号： H01L29/04 ,  H01L27/12

    CPC分类号： H01L29/78684 ,  H01L29/161

    摘要： @ There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprise rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.

    摘要翻译： 有游离缺失盘集成电路兼容薄膜场效应晶体管，其能够在低温下制造，并且在操作几乎切换率用途，例如，在速率视频应用。 晶体管包括具有如下结构的锗半导体材料的主体比非晶材料更有序的和大于单晶材料少排序。 晶体管的源极和漏极包括整流形成在或锗半导体材料的体接触。 所以圆盘游离缺失是使晶体管的方法以及电子可寻址阵列系统利用晶体管来获益。

    Ohmic contact layer
    7.
    发明公开
    Ohmic contact layer 失效
    Ohmische Kontaktschicht。

    公开(公告)号：EP0153043A2

    公开(公告)日：1985-08-28

    申请号：EP85300598.1

    申请日：1985-01-29

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Ovshinsky, Stanford R. ,  Hudgens, Stephen J.

    IPC分类号： H01L31/02 ,  H01L31/06

    CPC分类号： H01L31/0687 ,  H01L31/03921 ,  H01L31/076 ,  Y02E10/544 ,  Y02E10/548

    摘要： An electronic device having at least two superposed layers of amorphous semiconductor material of differing conductivity types and a sufficiently low number of defect states so as to form a rectifying junction between the layers, including a defect states introduction layer proximate the junction. The defect introduction layer includes a sufficient density of defect states to promote the flow of current by tunneling of charge carriers and thereby to establish an ohmic contact. Methods of forming the improved ohmic contact device are also disclosed.

    摘要翻译： 具有不同导电类型的非晶半导体材料的至少两个叠加层和足够少数量的缺陷状态的电子器件，以便在层之间形成整流结，包括接合点附近的缺陷状态引入层。 缺陷引入层包括足够的缺陷状态密度，以通过电荷载流子的隧穿而促进电流的流动，从而建立欧姆接触。 还公开了形成改进的欧姆接触器件的方法。