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1.发明授权PROCEDE DE FABRICATION D'UN COMPOSE I-III-VI EN COUCHES MINCES, FAVORISANT L'INCORPORATION D'ELEMENTS III DANS LA COUCHE 有权制造方法I-III-VI CONNECTION薄膜形成第III族元素在上述薄膜转印将帮助
公开(公告)号：EP1576660B1
公开(公告)日：2016-04-27
申请号：EP03814487.9
申请日：2003-12-23
发明人： TAUNIER, Stéphane , GUIMARD, Denis , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre-Philippe
IPC分类号： H01L21/208 , H01L31/032 , H01L31/18
CPC分类号： C25D3/56 , C25D9/08 , H01L31/0322 , Y02E10/541 , Y02P70/521
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2.发明授权PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS EN COUCHES MINCES A BASE DE COMPOSES I-III-VI(2), POUR APPLICATIONS PHOTOVOLTAIQUES 有权用于生产薄膜半导体基于I-III-VI（2）的化合物，用于光伏应用
公开(公告)号：EP1500146B1
公开(公告)日：2014-10-01
申请号：EP03747464.0
申请日：2003-04-23
发明人： TAUNIER, Stéphane , KERREC, Olivier , MAHE, Michel , GUIMARD, Denis , BEN-FARAH, Moëz , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre, Philippe , COWACHE, Pierre , VEDEL, Jacques
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
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3.发明公开PROCEDE DE FABRICATION D’UN COMPOSE I-III-VI EN COUCHES MINCES, FAVORISANT L’INCORPORATION D’ELEMENTS III DANS LA COUCHE 有权制造方法I-III-VI CONNECTION薄膜形成第III族元素在上述薄膜转印将帮助
公开(公告)号：EP1576660A1
公开(公告)日：2005-09-21
申请号：EP03814487.9
申请日：2003-12-23
发明人： TAUNIER, Stéphane , GUIMARD, Denis , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre-Philippe
IPC分类号： H01L21/208 , H01L31/032 , H01L31/18
CPC分类号： C25D3/56 , C25D9/08 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.
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4.发明授权PROCEDE DE REGENERATION D'UN BAIN D'ELECTROLYSE POUR LA FABRICATION D'UN COMPOSE I-III-VI sb 2 /sb EN COUCHES MINC ES 有权再生电解池以制造化合物I-III-VI sb 2 / sb在MINC层中的方法
公开(公告)号：EP1576209B1
公开(公告)日：2013-05-29
申请号：EP03796179.4
申请日：2003-12-05
发明人： TAUNIER, Stéphane , GUIMARD, Denis , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre-Philippe
IPC分类号： C25D21/18 , C25D9/08 , H01L21/368
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5.发明公开PROCEDE DE REGENERATION D'UN BAIN D'ELECTROLYSE POUR LA FABRICATION D'UN COMPOSE I-III-VI sb 2 /sb EN COUCHES MINC ES 有权程序再生D'UNBBA D'ELECTROLYSE POUR LA制作合成物I-III-VI sb 2 / sb EN COUCHES MINC ES
公开(公告)号：EP1576209A1
公开(公告)日：2005-09-21
申请号：EP03796179.4
申请日：2003-12-05
发明人： TAUNIER, Stéphane , GUIMARD, Denis , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre-Philippe
IPC分类号： C25D21/18 , C25D9/08 , H01L21/368
摘要： The invention relates to the regeneration of an electrolysis bath for the production of I-III-VIY compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).
摘要翻译： 本发明涉及用于生产薄层中的I-III-VIY化合物的电解浴的再生，其中y接近2并且VI是包括硒的元素，由此硒以Se（IV）和/ 或加入氧化水使浴中的硒再氧化成硒（IV）形式。
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6.发明授权SULFURISATION ET SELENISATION DE COUCHES DE CIGS ELECTRODEPOSE PAR RECUIT THERMIQUE 有权硫化和电解进行硒化通过热退火沉积CIGS LAYERS
公开(公告)号：EP1883975B1
公开(公告)日：2012-12-19
申请号：EP06755519.3
申请日：2006-05-19
发明人： TAUNIER, STÈPHANE , LINCOT, Daniel , GUILLEMOLES, Jean-François , NAGHAVI, Negar , GUIMARD, Denis
IPC分类号： H01L31/032 , H01L31/18 , H01L31/0749
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
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7.发明公开SULFURISATION ET SELENISATION DE COUCHES DE CIGS ELECTRODEPOSE PAR RECUIT THERMIQUE 有权硫化和电解进行硒化通过热退火沉积CIGS LAYERS
公开(公告)号：EP1883975A1
公开(公告)日：2008-02-06
申请号：EP06755519.3
申请日：2006-05-19
发明人： TAUNIER, STÈPHANE , LINCOT, Daniel , GUILLEMOLES, Jean-François , NAGHAVI, Negar , GUIMARD, Denis
IPC分类号： H01L31/0336
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallisation of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallisation processes or annealing.
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8.发明公开PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS EN COUCHES MINCES A BASE DE COMPOSES I-III-VI sb 2 /sb , POUR APPLICATIONS PHOTOVOLTAIQUES 有权用于生产薄膜半导体基于I-III-VI（2）的化合物，用于光伏应用
公开(公告)号：EP1500146A1
公开(公告)日：2005-01-26
申请号：EP03747464.0
申请日：2003-04-23
发明人： TAUNIER, Stéphane , KERREC, Olivier , MAHE, Michel , GUIMARD, Denis , BEN-FARAH, Mo[z , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre, Philippe , COWACHE, Pierre , VEDEL, Jacques
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
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