公开(公告)号：EP2901496A2

公开(公告)日：2015-08-05

申请号：EP13779754.4

申请日：2013-09-27

申请人： Centre National de la Recherche Scientifique (CNRS) ,  Electricité de France (EDF) ,  Université Pierre et Marie Curie (Paris 6)

发明人： PELOUARD, Jean-Luc ,  GUILLEMOLES, Jean-François ,  PROISE, Florian ,  PAIRE, Myriam ,  LINCOT, Daniel

IPC分类号： H01L31/0352 ,  H01L31/055

CPC分类号： H01L31/02327 ,  H01L27/142 ,  H01L31/0203 ,  H01L31/035209 ,  H01L31/0475 ,  H01L31/055 ,  H01L31/108 ,  H01L31/186 ,  Y02E10/52

摘要： In one aspect, the invention relates to a photovoltaic component (100) comprising at least one first set of photovoltaic nano-cells (101) each comprising one optical nano-antenna having an electromagnetic resonance in a first resonance spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and comprising a spectral conversion layer (107) allowing at least part of the solar spectrum to be converted to said first resonance spectral band.

公开(公告)号：EP1883975B1

公开(公告)日：2012-12-19

申请号：EP06755519.3

申请日：2006-05-19

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) ,  Electricité de France

发明人： TAUNIER, STÈPHANE ,  LINCOT, Daniel ,  GUILLEMOLES, Jean-François ,  NAGHAVI, Negar ,  GUIMARD, Denis

IPC分类号： H01L31/032 ,  H01L31/18 ,  H01L31/0749

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/541 ,  Y02P70/521

公开(公告)号：EP1883975A1

公开(公告)日：2008-02-06

申请号：EP06755519.3

申请日：2006-05-19

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) ,  Electricité de France

发明人： TAUNIER, STÈPHANE ,  LINCOT, Daniel ,  GUILLEMOLES, Jean-François ,  NAGHAVI, Negar ,  GUIMARD, Denis

IPC分类号： H01L31/0336

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/541 ,  Y02P70/521

摘要： The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallisation of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallisation processes or annealing.

公开(公告)号：EP2577737B1

公开(公告)日：2016-07-13

申请号：EP11726735.1

申请日：2011-05-31

申请人： Centre National de la Recherche Scientifique (CNRS) ,  Université Pierre et Marie Curie (Paris 6) ,  Electricité de France (EDF)

发明人： LINCOT, Daniel ,  PAIRE, Myriam ,  GUILLEMOLES, Jean-François ,  PELOUARD, Jean-Luc ,  COLLIN, Stéphane

IPC分类号： H01L31/04 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L31/022466 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/042 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0504 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/068 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/52 ,  Y02E10/541 ,  Y02E10/543 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2831920A2

公开(公告)日：2015-02-04

申请号：EP13719933.7

申请日：2013-03-28

申请人： Centre National de la Recherche Scientifique (CNRS) ,  Electricité de France

发明人： NAGHAVI, Negar ,  JEHL, Zacharie ,  LINCOT, Daniel ,  GUILLEMOLES, Jean-François

IPC分类号： H01L31/032

CPC分类号： H01L31/02327 ,  H01L31/02168 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin-film photovoltaic cell structure with a mirror layer. The invention concerns a photovoltaic cell structure intended for applications in solar panels. The thin-film photovoltaic cell structure comprises at least one layer of I-III-VI2 alloy (CIGS) with photovoltaic properties, for converting an illuminating light into electricity. In particular, the structure comprises at least: - one mirror layer (MR) comprising a reflecting face (FR) for reflecting a portion of the illuminating light, the reflecting face (FR) being opposite a first face (F1) of the layer of I-III-VI2 alloy (CIGS), for receiving, on said first face, a reflected illuminating light, and - one or a plurality of first transparent layers (CA, ENC) transparent to said illuminating light, for receiving an illuminating light transmitted onto a second face (F2) of the layer of I-III-VI2 alloy (CIGS) opposite the first face (F1).

摘要翻译： 具有镜层的薄层光伏电池结构。 本发明涉及一种用于太阳能电池板应用的光伏电池结构。 薄层光伏电池结构包括具有用于将照明光转换成电的光伏特性的至少一个I-III-VI2合金层（CIGS）。 特别地，该结构至少包括：一个镜层（MR），其包括反射（FR）照明光的一部分的表面，其中所述反射表面（FR）面向I-III-的第一面（F1） VI2合金层，用于接收所述第一面上的反射照明光; 以及对于在与第一面（F1）相对的I-III-VI2合金层的第二面（F2）上用于接收透射照明光的照明光透明的一个或多个第一层（CA，ENC）。

公开(公告)号：EP2531839A1

公开(公告)日：2012-12-12

申请号：EP11707464.1

申请日：2011-02-07

申请人： Centre National de la Recherche Scientifique CNRS ,  Electricité de France ,  Université de Versailles Saint-Quentin-en-Yvelines

发明人： GUILLEMOLES, Jean-François ,  ETCHEBERRY, Arnaud ,  GERARD, Isabelle ,  TRAN-VAN, Pierre

IPC分类号： G01N21/64 ,  G01N21/47 ,  G01R31/26

CPC分类号： G01N21/6489 ,  G01N21/4738 ,  G01N2021/6493 ,  G01N2201/065 ,  H02S50/10

摘要： The invention relates to a method for determining the maximum open circuit voltage (Vco) and the power that can be output by a photoconverter material subject to a measurement light intensity 10, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength (λ2) substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage (Vco) of the photoconverter material with the measurement light intensity 10 by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterised in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.

公开(公告)号：EP3000136B1

公开(公告)日：2019-04-10

申请号：EP14729408.6

申请日：2014-05-12

申请人： Electricité de France ,  Centre National de la Recherche Scientifique - CNRS

发明人： PAIRE, Myriam ,  GUILLEMOLES, Jean-François ,  LOMBEZ, Laurent ,  LINCOT, Daniel ,  COLLIN, Stéphane ,  PELOUARD, Jean-Luc

IPC分类号： H01L31/054 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/075

公开(公告)号：EP1576209B1

公开(公告)日：2013-05-29

申请号：EP03796179.4

申请日：2003-12-05

申请人： Electricité de France, Société Anonyme ,  Centre National de la Recherche Scientifique - CNRS

发明人： TAUNIER, Stéphane ,  GUIMARD, Denis ,  LINCOT, Daniel ,  GUILLEMOLES, Jean-François ,  GRAND, Pierre-Philippe

IPC分类号： C25D21/18 ,  C25D9/08 ,  H01L21/368

CPC分类号： C25D21/18 ,  C25D9/08

公开(公告)号：EP1576209A1

公开(公告)日：2005-09-21

申请号：EP03796179.4

申请日：2003-12-05

申请人： Electricité de France, Société Anonyme ,  Centre National De La Recherche Scientifique-CNRS

发明人： TAUNIER, Stéphane ,  GUIMARD, Denis ,  LINCOT, Daniel ,  GUILLEMOLES, Jean-François ,  GRAND, Pierre-Philippe

IPC分类号： C25D21/18 ,  C25D9/08 ,  H01L21/368

CPC分类号： C25D21/18 ,  C25D9/08

摘要： The invention relates to the regeneration of an electrolysis bath for the production of I-III-VIY compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

摘要翻译： 本发明涉及用于生产薄层中的I-III-VIY化合物的电解浴的再生，其中y接近2并且VI是包括硒的元素，由此硒以Se（IV）和/ 或加入氧化水使浴中的硒再氧化成硒（IV）形式。

公开(公告)号：EP4454122A1

公开(公告)日：2024-10-30

申请号：EP22835075.7

申请日：2022-12-16

申请人： Electricité de France ,  Institut Photovoltaique D'Ile de France (IPVF) ,  TotalEnergies OneTech ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： PUEL, Jean-Baptiste ,  JULIEN, Arthur ,  GUILLEMOLES, Jean-François

IPC分类号： H02S50/00