公开(公告)号：EP2063468B1

公开(公告)日：2018-09-19

申请号：EP07829704.1

申请日：2007-10-12

申请人： Epistar Corporation

发明人： TAKEUCHI, Kunio ,  KUNOH, Yasumitsu

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/38

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/385 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2933/0075 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).