公开(公告)号：EP1913633B1

公开(公告)日：2018-11-14

申请号：EP06788428.8

申请日：2006-07-25

申请人： NXP USA, Inc.

发明人： HESS, Kevin J. ,  LEE, Chu-Chung

IPC分类号： H01L23/28 ,  H01L23/367

CPC分类号： H01L23/50 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73207 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor package (10) uses a plurality of thermal conductors (56-64) that extend upward within an encapsulant (16) from one or more thermal bond pads (22, 24, 26) on a die (14) to disperse heat. The thermal conductors may be bond wires or conductive stud bumps and do not extend beyond a lateral edge of the die. One or more of the thermal conductors may be looped within the encapsulant and exposed at an upper surface of the encapsulant. In one form a heat spreader (68) is placed overlying the encapsulant for further heat removal. In another form the heat spreader functions as a power or ground terminal directly to points interior to the die via the thermal conductors. Active bond pads may be placed exclusively along the die's periphery or also included within the interior of the die.

公开(公告)号：EP2063468B1

公开(公告)日：2018-09-19

申请号：EP07829704.1

申请日：2007-10-12

申请人： Epistar Corporation

发明人： TAKEUCHI, Kunio ,  KUNOH, Yasumitsu

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/38

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/385 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2933/0075 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).

公开(公告)号：EP2954252B1

公开(公告)日：2018-08-22

申请号：EP14749260.7

申请日：2014-01-31

申请人： Cree, Inc.

发明人： VAN DE VEN, Antony, Paul ,  PICKARD, Paul, Kenneth

IPC分类号： F21S2/00 ,  H01L33/00 ,  F21K99/00

CPC分类号： H05B33/0857 ,  A61M21/00 ,  A61M2021/0044 ,  A61M2021/0083 ,  A61N5/0618 ,  A61N2005/0626 ,  A61N2005/0652 ,  A61N2005/0662 ,  H01L2224/48091 ,  H01L2224/48465 ,  H05B33/0806 ,  H01L2924/00014

摘要： Solid state light emitting devices include multiple LED components providing adjustable melatonin suppression effects. Multiple LED components may be operated simultaneously according to different operating modes according to which their combined output provides the same or similar chromaticity, but provides melatonin suppressing effects that differ by at least a predetermined threshold amount between the different operating modes. Switching between operating modes may be triggered by user input elements, timers/clocks, or sensors (e.g., photosensors). Chromaticity of combined output of multiple LED components may also be adjusted, together with providing adjustable melatonin suppression effects at each selected combined output chromaticity.

公开(公告)号：EP1603170B1

公开(公告)日：2018-08-01

申请号：EP04719060.8

申请日：2004-03-10

申请人： TOYODA GOSEI CO., LTD. ,  SUMITA OPTICAL GLASS, INC.

发明人： SUEHIRO, Yoshinobu, c/o Toyoda Gosei Co. Ltd. ,  INOUE, Mitsuhiro, c/o Toyoda Gosei Co. Ltd. ,  KATO, Hideaki, c/o Toyoda Gosei Co. Ltd. ,  HADAME, Kunihiro, c/o Toyoda Gosei Co. Ltd. ,  TOHMON, Ryoichi, c/o Toyoda Gosei Co. Ltd. ,  WADA, Satoshi, c/o Toyoda Gosei Co. Ltd. ,  OTA, Koichi, c/o Toyoda Gosei Co. Ltd. ,  AIDA, Kazuya, c/o Sumita Optical Glass Inc. ,  WATANABE, Hiroki, c/o Sumita Optical Glass Inc. ,  YAMAMOTO, Yoshinori, c/o Sumita Optical Glass Inc. ,  OHTSUKA, Masaaki, c/o Sumita Optical Glass Inc. ,  SAWANOBORI, Naruhito, c/o Sumita Optical Glass Inc

IPC分类号： H01L33/00 ,  H01L31/02 ,  H01L23/28

CPC分类号： H01L33/56 ,  C03B23/20 ,  C03C8/24 ,  C03C27/06 ,  H01L24/17 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01057 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a solid element device, which comprises providing a glass-containing Al2O3 substrate (3) having a GaN based LED element (2) placed thereon, setting a P2O5-ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415 DEG C or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 10 poise, and is adhered via an oxide formed on the surface of the glass-containing Al2O3 substrate (3). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.

公开(公告)号：EP3220410A4

公开(公告)日：2018-07-18

申请号：EP14890461

申请日：2014-11-13

申请人： RENESAS ELECTRONICS CORP

发明人： MAEKAWA KAZUYOSHI ,  KAWANO YUICHI

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L24/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/02181 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/0347 ,  H01L2224/035 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05566 ,  H01L2224/05567 ,  H01L2224/05664 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/4502 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/01008

摘要： A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.

公开(公告)号：EP1256132B1

公开(公告)日：2018-05-09

申请号：EP01905860.1

申请日：2001-01-30

申请人： 3D Plus

发明人： VAL, Christian

IPC分类号： H01L25/10 ,  H01L21/98

CPC分类号： H01L25/50 ,  H01L25/105 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2225/1029 ,  H01L2225/1064 ,  H01L2924/0102 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

公开(公告)号：EP3282478A4

公开(公告)日：2018-05-02

申请号：EP16785938

申请日：2016-04-28

申请人： HUAWEI TECH CO LTD

发明人： FU HUILI ,  CAI SHUJIE ,  LUO FEIYU

IPC分类号： H01L23/485 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367

CPC分类号： H01L23/367 ,  H01L21/02107 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/485 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/13023 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Embodiments of the present invention provide an IC die and a preparation method thereof, so as to resolve a problem that a currently used heat dissipation method of an IC chip has a limited effect in an aspect of reducing a temperature of a heat point on a surface of the IC chip. The IC die includes an underlay; an active component; an interconnection layer, covering the active component, where the interconnection layer includes multiple metal layers and multiple dielectric layers, the multiple metal layers and the multiple dielectric layers are alternately arranged, a metal layer whose distance to the active component is the farthest in the multiple metal layers includes metal cabling and a metal welding pad; and a heat dissipation layer, where the heat dissipation layer covers a region above the interconnection layer except a position corresponding to the metal welding pad, the heat dissipation layer is located under a package layer, the package layer includes a plastic packaging material, and the heat dissipation layer includes an electrical-insulating material whose heat conductivity is greater than a preset value.

公开(公告)号：EP3014657B1

公开(公告)日：2018-04-25

申请号：EP14736457.4

申请日：2014-06-18

申请人： Lumileds Holding B.V.

发明人： LEE, Sze Kuang ,  MARTIN, Paul Scott ,  KRAUS, Albrecht Johannes ,  KANG, Chunheng ,  PAN, Hui Ling ,  YIN, Long

IPC分类号： H01L25/075 ,  H01L33/62 ,  H01L33/56 ,  H01L33/48

CPC分类号： H01L25/0753 ,  H01L33/486 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4848 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In one embodiment, an LED bulb includes a plurality of metal lead frame strips, including at least a first strip, a second strip, and a third strip. First LED dies have their bottom electrodes electrically and thermally connected to a top surface of the first strip. Second LED dies have their bottom electrodes electrically and thermally connected to a top surface of the second strip. The top electrodes of the first LED dies are wire bonded to the second strip, and the top electrodes of the second LED dies are wire bonded to the third strip to connect the first LED dies and second LED dies in series and parallel. The strips are then bent to cause the LED dies to face different directions to obtain a wide emission pattern in a small space. The strips are then enclosed in a thermally conductive bulb having electrical leads.

公开(公告)号：EP2718397B1

公开(公告)日：2018-04-25

申请号：EP12726990.0

申请日：2012-05-31

申请人： Cree, Inc.

发明人： CLATTERBUCK, David ,  COLLINS, Brian, Thomas

IPC分类号： C09K11/77 ,  H05B33/14

CPC分类号： H01L33/502 ,  C09K11/7774 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided herein are phosphor compositions that include a YAG phosphor that is substituted with gallium, such as YaCebAlcGadOz, wherein a, b, c, d and z are positive numbers. Also provided are solid state light emitting devices that include a YAG phosphor that is substituted with gallium.

公开(公告)号：EP3267500A1

公开(公告)日：2018-01-10

申请号：EP15884049.6

申请日：2015-03-04

申请人： BK Technology Co., Ltd.

发明人： LEE, Dong-Woo

IPC分类号： H01L33/62 ,  H01L33/64 ,  H01L33/52 ,  H01L23/495

CPC分类号： H01L23/49568 ,  F21S4/00 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L23/495 ,  H01L23/49575 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a lead frame for a semiconductor package, comprising: an anode 10, a cathode 20, a molding part 30, terminal parts 90 and 91, wherein one or more heat radiating holes 40, one or more chip attachment parts 50 which have a wider surface area than surface areas of semiconductor chips 55 to be attached, one or more upper openings 70 and 71 are positioned in an upper portion of the lead frame, and wherein one or more heat radiating holes 40, one or more first lower openings 60, and one or more second lower openings 80 are positioned in a lower portion of the lead frame; a semiconductor package including the lead frame; and a lighting apparatus including the semiconductor package.

摘要翻译： 公开了一种用于半导体封装的引线框架，包括：阳极10，阴极20，模制部分30，端子部分90和91，其中一个或多个散热孔40，一个或多个芯片连接部分50， 比要附接的半导体芯片55的表面区域更宽的表面积，一个或多个上部开口70和71位于引线框架的上部中，并且其中一个或多个散热孔40，一个或多个第一下部开口60 并且一个或多个第二下开口80位于引线框架的下部中; 包括引线框架的半导体封装; 以及包括该半导体封装的照明设备。