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1.发明公开Regulated MOS substrate bias voltage generator for a static random access memory 失效调节MOS衬底偏压发生器，用于静态读 - 写存储器。
公开(公告)号：EP0051532A2
公开(公告)日：1982-05-12
申请号：EP81401719.0
申请日：1981-10-28
CPC分类号： G05F3/205 , G11C5/146 , G11C11/413 , H02M3/07 , H02M3/073
摘要： A regulated substrate bias voltage generating system for maintaining a minimum data retaining current through an associated MOS memory. The negative substrate bias voltage is generated by a charge pump operating under the control of a two-phased output oscillator, the operation of which is enabled and disabled by the output signals from a MOS memory over-current sensor, a MOS under-current sensor, and a bias voltage level sensor.
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2.发明公开Regulated MOS substrate bias voltage generator for a static random access memory 失效用于静态随机访问存储器的调节MOS衬底偏置电压发生器
公开(公告)号：EP0051532A3
公开(公告)日：1983-08-03
申请号：EP81401719
申请日：1981-10-28
CPC分类号： G05F3/205 , G11C5/146 , G11C11/413 , H02M3/07 , H02M3/073
摘要： A regulated substrate bias voltage generating system for maintaining a minimum data retaining current through an associated MOS memory. The negative substrate bias voltage is generated by a charge pump operating under the control of a two-phased output oscillator, the operation of which is enabled and disabled by the output signals from a MOS memory over-current sensor, a MOS under-current sensor, and a bias voltage level sensor.
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3.发明公开
公开(公告)号：EP0051533A2
公开(公告)日：1982-05-12
申请号：EP81401720.8
申请日：1981-10-28
IPC分类号： G11C5/00
CPC分类号： G11C5/141
摘要： MOS control circuitry for incorporation on a microcomputer IC chip for assuring adequate power to maintain the data in an associated static random access memory. A rechargeable battery provides standby power, and the voltage level of the battery is compared with the microcomputer V cc supply. Whenever V cc drops below a predetermined level, such as the standby battery voltage level, the circuitry disconnects the V cc from the memory input power and replaces it with standby battery power. When V cc is returned to the system, a gate applies a trickle charge to the battery.
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4.发明授权Regulated MOS substrate bias voltage generator for a static random access memory 失效用于静态随机访问存储器的调节MOS衬底偏置电压发生器
公开(公告)号：EP0051532B1
公开(公告)日：1986-03-12
申请号：EP81401719.0
申请日：1981-10-28
CPC分类号： G05F3/205 , G11C5/146 , G11C11/413 , H02M3/07 , H02M3/073
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5.发明公开
公开(公告)号：EP0051533A3
公开(公告)日：1984-03-28
申请号：EP81401720
申请日：1981-10-28
IPC分类号： G11C05/00
CPC分类号： G11C5/141
摘要： MOS control circuitry for incorporation on a microcomputer IC chip for assuring adequate power to maintain the data in an associated static random access memory. A rechargeable battery provides standby power, and the voltage level of the battery is compared with the microcomputer V cc supply. Whenever V cc drops below a predetermined level, such as the standby battery voltage level, the circuitry disconnects the V cc from the memory input power and replaces it with standby battery power. When V cc is returned to the system, a gate applies a trickle charge to the battery.
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