公开(公告)号：EP0176409A3

公开(公告)日：1987-05-06

申请号：EP85401717

申请日：1985-09-05

申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION

发明人： Strain, Robert

IPC分类号： H01L29/16

CPC分类号： H01L27/0921 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/167 ,  Y10S148/061 ,  Y10S438/918

摘要： The tendency of a CMOS circuit to latch up is reduced by implanting ions of germanium or tin into the source and drain regions of the circuit. The low energy gap of these ions lowers the band gap of the source and drain regions, which in turn inhibits their ability to inject carriers into the substrate and well.