公开(公告)号：EP4425533A1

公开(公告)日：2024-09-04

申请号：EP24157646.1

申请日：2024-02-14

申请人： STMicroelectronics International N.V.

发明人： CAMALLERI, Cateno Marco ,  SAGGIO, Mario Giuseppe ,  ZANETTI, Edoardo ,  BELLOCCHI, Gabriele

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L21/046 ,  H01L21/047 ,  H01L21/26506 ,  H01L29/1608 ,  H01L21/0465 ,  H01L21/2652 ,  H01L29/66068 ,  H01L29/7802 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26553 ,  H01L29/66712 ,  H01L29/2003

摘要： A manufacturing process provides for: forming a semiconductor body (2) of silicon carbide, having a front surface (1a); performing a localized ion implantation to form implanted regions (12) in implant portions (21) in the semiconductor body (2). The step of performing a localized ion implantation provides for: forming damaged regions (10) at the front surface (1a), separated from each other by the implant portions (21) in a direction (x) parallel to said front surface (1a); performing a channeled ion implantation, for implanting doping ions within the semiconductor body (2) and forming the implanted regions (12) at the implant portions (21) of the semiconductor body (2). The channeled ion implantation is performed in a self-aligned manner with respect to the damaged regions (10), which represent damaged regions of the silicon-carbide crystallographic lattice such as to block a propagation of the channeled ion implantation along a vertical axis (z) orthogonal to the front surface (1a), in a depth direction of the semiconductor body (2).

公开(公告)号：EP3920209B1

公开(公告)日：2024-07-31

申请号：EP20863310.7

申请日：2020-09-08

IPC分类号： H01L21/331 ,  H01L29/739 ,  H01L29/32 ,  H01L21/266 ,  H01L21/265 ,  H01L29/06 ,  H01L29/40 ,  H01L29/08 ,  H01L29/423 ,  H01L29/36 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/32 ,  H01L29/4238 ,  H01L29/0834 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/407 ,  H01L21/26506 ,  H01L29/8613

公开(公告)号：EP2261960B1

公开(公告)日：2018-10-10

申请号：EP09728673.6

申请日：2009-03-30

申请人： NLT Technologies, Ltd.

发明人： MORI, Shigeru ,  SHOUJI, Isao ,  TANABE, Hiroshi ,  SHIBATA, Megumi

IPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L21/265

CPC分类号： H01L29/78621 ,  G02F2001/13685 ,  H01L21/26506 ,  H01L21/26513

摘要： A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20nm to 40nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.

公开(公告)号：EP2043137B1

公开(公告)日：2018-10-03

申请号：EP08014918.0

申请日：2008-08-22

申请人： Infineon Technologies AG

发明人： Schulze, Hans-Joachim ,  Strack, Helmut ,  Timme, Hans-Joerg

IPC分类号： H01L21/265 ,  H01L21/322

CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L21/3221 ,  Y10T428/2495 ,  Y10T428/26

摘要： A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.

公开(公告)号：EP3333881A2

公开(公告)日：2018-06-13

申请号：EP17191409.6

申请日：2011-02-26

申请人： Entegris, Inc.

发明人： Kaim, Robert ,  Sweeney, Joseph ,  Avila, Anthony ,  Ray, Richard

IPC分类号： H01L21/265 ,  H01J37/317 ,  H01J37/08

CPC分类号： H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

摘要： A dopant gas composition comprising a dopant gas including boron trifluoride or diborane, a diluent gas comprising hydrogen, and optionally a co-species gas, wherein at least one of the dopant gas and the optional co-species gas, when the optional co-species gas is present in the gas composition, is isotopically enriched; and wherein the composition is provided as a gas mixture in a single supply vessel 302, from which the gas mixture can be dispensed and flowed to an ion source of an ion implantation system 300.

公开(公告)号：EP3142151B1

公开(公告)日：2018-03-07

申请号：EP16188199.0

申请日：2016-09-09

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： REBOH, Shay ,  GRENOUILLET, Laurent ,  MILESI, Frédéric ,  MORAND, Yves ,  RIEUTORD, François

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/223 ,  H01L21/265 ,  H01L21/762 ,  H01L21/84 ,  H01L29/08 ,  H01L21/266 ,  H01L21/8238

CPC分类号： H01L21/84 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7842 ,  H01L29/7846

公开(公告)号：EP3188227A1

公开(公告)日：2017-07-05

申请号：EP16204646.0

申请日：2016-12-16

申请人： Semiconductor Manufacturing International Corporation (Shanghai) ,  Semiconductor Manufacturing International Corporation (Beijing)

发明人： LI, Yong

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/417

CPC分类号： H01L21/823871 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823821 ,  H01L23/535 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/36 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/785

摘要： A method for fabricating a Fin-FET device includes forming fin structures with each having a gate structure on the top in both P-type regions and N-type regions, forming a first epitaxial layer on each fin structure on both sides of the gate structure in the P-type regions, forming a P-type doped first covering layer on each first epitaxial layer, forming a second epitaxial layer on each fin structure on both sides of the gate structure in the N-type regions, forming an N-type doped second covering layer on each second epitaxial layer, and forming a titanium-containing silicification layer on the first covering layer and the second covering layer. The method further includes performing a first annealing process to let titanium ions in the silicification layer diffuse into the first covering layer to form a first metal silicide layer and into the second covering layer to form a second metal silicide layer.

摘要翻译： 一种用于制造鳍式场效应晶体管器件的方法，包括：形成鳍状结构，其中每个在P型区域和N型区域的顶部具有栅极结构;在栅极结构两侧的每个鳍状结构上形成第一外延层 在P型区域中，在每个第一外延层上形成P型掺杂的第一覆盖层，在N型区域中的栅极结构两侧的每个鳍状结构上形成第二外延层，形成N型 在每个第二外延层上形成掺杂有掺杂的第二覆盖层，以及在第一覆盖层和第二覆盖层上形成含钛硅化层。 该方法进一步包括执行第一退火工艺以使硅化层中的钛离子扩散到第一覆盖层中以形成第一金属硅化物层并且进入第二覆盖层中以形成第二金属硅化物层。

公开(公告)号：EP3142151A1

公开(公告)日：2017-03-15

申请号：EP16188199.0

申请日：2016-09-09

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： REBOH, Shay ,  GRENOUILLET, Laurent ,  MILESI, Frédéric ,  MORAND, Yves ,  RIEUTORD, François

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L21/84 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7842 ,  H01L29/7846

摘要： Procédé de réalisation de transistor(s) à structure de canal contraint dans lequel on réalise au moins une implantation ionique amorphisante de la couche superficielle d'un substrat de type semi-conducteur sur isolant à travers des ouvertures d'un masquage, de sorte à rendre amorphe des zones (12b) de la couches superficielles et à induire une relaxation d'une zone (12a) destinée à former un canal et située entre les zones rendues amorphes, la relaxation étant réalisée dans une direction orthogonale à celle dans laquelle le courant du canal est destiné à circuler (figure 1C).

摘要翻译： 用于产生应力通道结构晶体管的方法，其中通过掩模中的开口进行绝缘体上半导体类型的衬底的表面层的至少一个非晶化离子注入，以使表面层的区域成为无定形和 以诱导旨在形成通道并且位于已经呈现无定形的区域之间的区域的松弛，该弛豫在与通道电流流动的方向正交的方向上进行。

公开(公告)号：EP2175477B1

公开(公告)日：2017-01-04

申请号：EP08776766.1

申请日：2008-07-03

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： KOBAYASHI, Norihiro ,  AGA, Hiroji ,  NAGAOKA, Yasuo ,  NOTO, Nobuhiko

IPC分类号： H01L21/762 ,  H01L21/265 ,  H01L21/02

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/26506

摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.

公开(公告)号：EP2930741A4

公开(公告)日：2016-11-23

申请号：EP14818522

申请日：2014-06-17

申请人： FUJI ELECTRIC CO LTD

发明人： ONOZAWA YUICHI ,  TAKISHITA HIROSHI ,  YOSHIMURA TAKASHI

IPC分类号： H01L21/322 ,  H01L21/263 ,  H01L21/268 ,  H01L21/329 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L29/0615 ,  H01L21/2605 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/868