专利检索 ap:("FAIRCHILD SEMICONDUCTOR") AND inv:"LANGE DOUGLAS J" 第 1 页

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发明公开
QUICK PUNCH THROUGH IGBT HAVING GATE-CONTROLLABLE i d /i i i /d /i t AND REDUCED EMI DURING INDUCTIVE TURN OFF i /i 审中-公开
标题翻译： IGBT通过栅极控制DI / DT快速击穿，并在感应断开期间降低EMI

公开(公告)号：EP1440464A4

公开(公告)日：2010-07-21

申请号：EP02802458

申请日：2002-10-23

申请人： FAIRCHILD SEMICONDUCTOR

发明人： YEDINAK JOSEPH A , GLADISH JON , SHEKHAWAT SAMPAT , DOLNY GARY M , SHENOY PRAVEEN MURALEEDHARAN , LANGE DOUGLAS J , RINEHIMER MARK L

IPC分类号： H01L29/78 , H01L29/10 , H01L29/423 , H01L29/739 , H01L21/332 , H01L21/331

CPC分类号： H01L29/4232 , H01L29/1095 , H01L29/66333 , H01L29/7395