PRE-DRIVE CIRCUIT
    1.
    发明公开
    PRE-DRIVE CIRCUIT 失效
    ANSTEUERSCHALTUNG。

    公开(公告)号:EP0299088A1

    公开(公告)日:1989-01-18

    申请号:EP88901312.4

    申请日:1988-01-29

    申请人: FANUC LTD

    IPC分类号: H03K17/04 H03K17/691

    CPC分类号: H03K17/691 H03K17/04123

    摘要: A pre-drive circuit for controlling the turn on/turn off of a MOS FET via a pulse transformer. Between the secondary side of the pulse transformer and the MOS FET, there is provided an element which electrically shuts off the pulse transformer from the MOS FET when a voltage across the gate and the drain of the MOS FET has dropped to some extent toward the negative side, such that the gate - drain voltage of the MOS FET will not excessively plunge into a negative value.

    摘要翻译: 开关电路(1)的MOS FET(Q1)被导通/截止,由预驱动电路(2)经由脉冲变压器(T)控制。 为了接通,脉冲变压器的初级侧(P1)上的驱动晶体管(Q2)导通,从而在次级侧产生电压(51)。 这样就将MOS FET(Q1)的栅极(G)充电到正极,并接通开关。 为了关断,驱动晶体管(Q2)截止,栅极(Q)通过电流(IE)放电。 当栅极电压变为零时,MOS FET(Q1)截止。 栅极电压进一步下降,直到达到由齐纳二极管(ZD3)确定的负电平,当另一个FET(Q3)关断时,阻止进一步的电流(IE)。

    ELECTRIC POWER SOURCE FOR A CONTROL UNIT
    2.
    发明公开
    ELECTRIC POWER SOURCE FOR A CONTROL UNIT 失效
    电电源的控制单元。

    公开(公告)号:EP0063611A1

    公开(公告)日:1982-11-03

    申请号:EP81902959.6

    申请日:1981-10-28

    申请人: FANUC LTD.

    IPC分类号: H02J1/00 G06F1/00

    CPC分类号: G05B9/02 G05F1/577 G06F1/30

    摘要: in an electric power source for a control unit equipped with a main power source unit (600) including a control circuit power source (601), a driving power source (602) and one or more extension power source units (700), each of which includes at least one of a control circuit power source (701) and a driving power source (702), the main power source unit and the extension power source units are collectively controlled and prevented from malfunctioning at the time when the source units are turned on and off or when the power source is in an abnormal state. To do this, when the power source unit is turned on, the driving power source is turned on after detecting means (603, 703) detect the complete establishment of voltages in the control circuit power source in both of the main power source unit and the extension power source units, and then detecting means (604, 704) detect the establishment of voltages in all of the power sources in both of the power source units. When the establishment of all of the voltages in all of the power source units is detected (606, 706), an enable signal (EN) is output and then both of the power source units are simultaneously turned on. When the power source unit is turned off or the power source becomes abnormal, detecting circuits (603, 604, 703, 704) detect this and then the enable signal is stopped, and then the driving power source and the control circuit power source are turned off in that order.

    PRE-DRIVE CIRCUIT
    3.
    发明授权
    PRE-DRIVE CIRCUIT 失效
    控制电路。

    公开(公告)号:EP0299088B1

    公开(公告)日:1994-04-13

    申请号:EP88901312.4

    申请日:1988-01-29

    申请人: FANUC LTD.

    IPC分类号: H03K17/04 H03K17/691

    CPC分类号: H03K17/691 H03K17/04123

    摘要: A pre-drive circuit for controlling the turn on/turn off of a MOS FET via a pulse transformer. Between the secondary side of the pulse transformer and the MOS FET, there is provided an element which electrically shuts off the pulse transformer from the MOS FET when a voltage across the gate and the drain of the MOS FET has dropped to some extent toward the negative side, such that the gate - drain voltage of the MOS FET will not excessively plunge into a negative value.

    DRIVE CIRCUIT FOR POWER SWITCHING TRANSISTOR
    5.
    发明公开
    DRIVE CIRCUIT FOR POWER SWITCHING TRANSISTOR 失效
    驱动电路用于功率开关晶体管。

    公开(公告)号:EP0085112A1

    公开(公告)日:1983-08-10

    申请号:EP82902377.9

    申请日:1982-08-07

    申请人: FANUC LTD.

    IPC分类号: H03K17/04 H03K17/60 H02M3/335

    摘要: A drive circuit for a power switching transistor which controls a power switching transistor (Q L ) connected to the output terminal of a base circuit (BSC) so that it is turned on or off on the basis of signals input to a preamplifier (PAP), which circuit contains the preamplifier (PAP). the base circuit (BSC) driving the power switching transistor (Q L ) and a pulse transformer (PT) electromagnetically coupling the preamplifier (PAP) to the base circuit (BSC), in which the preamplifier (PAP) is connected in series with the primary coil of the transformer (PT) and a low impedance circuit is provided which forms a current loop with the primary coil with respect to the flyback voltage generated in the secondary coil of the transformer (PT).

    DRIVE CIRCUIT FOR POWER SWITCHING TRANSISTOR
    6.
    发明授权
    DRIVE CIRCUIT FOR POWER SWITCHING TRANSISTOR 失效
    用于电源开关晶体管的驱动电路

    公开(公告)号:EP0085112B1

    公开(公告)日:1987-11-11

    申请号:EP82902377.9

    申请日:1982-08-07

    申请人: FANUC LTD.

    IPC分类号: H03K17/04 H03K17/60 H02M3/335

    摘要: A drive circuit for a power switching transistor which controls a power switching transistor (QL) connected to the output terminal of a base circuit (BSC) so that it is turned on or off on the basis of signals input to a preamplifier (PAP), which circuit contains the preamplifier (PAP), the base circuit (BSC) driving the power switching transistor (QL) and a pulse transformer (PT) electromagnetically coupling the preamplifier (PAP) to the base circuit (BSC), in which the preamplifier (PAP) is connected in series with the primary coil of the transformer (PT) and a low impedance circuit is provided which forms a current loop with the primary coil with respect to the flyback voltage generated in the secondary coil of the transformer (PT).