公开(公告)号：EP1766739A4

公开(公告)日：2010-01-27

申请号：EP05856164

申请日：2005-06-30

申请人： FINISAR CORP

发明人： RATOWSKY RICHARD P ,  VERMA ASHISH K ,  ENG LARS

IPC分类号： H01S5/20 ,  H01S5/22

CPC分类号： H01S5/20 ,  H01S5/0655 ,  H01S5/12 ,  H01S5/2027 ,  H01S5/204 ,  H01S5/22 ,  H01S5/4031

摘要： Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.

摘要翻译： 从半导体激光器剥离光学模式的系统和方法。 具有多层的波导层包括在半导体激光器中，并且通常布置在有源区下方。 波导层被配置为匹配二阶模式的相位。 波导层基本上不匹配激光器的主要光学模式。 通过匹配二阶模式的相位，二阶模式的限制被减小，并且二阶模式与波导层强耦合。 初级模式的光学限制实质上不减少。 由此，通过从有源区域剥离二阶模式，从而提高了侧模抑制比。