公开(公告)号：EP3204965A1

公开(公告)日：2017-08-16

申请号：EP15848458.4

申请日：2015-10-05

申请人： Wisconsin Alumni Research Foundation

发明人： MA, Zhenqiang ,  SEO, Jung-Hun

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L21/283 ,  H01L27/156 ,  H01L31/0328 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/04 ,  H01L33/28 ,  H01L33/32 ,  H01S5/105 ,  H01S5/18369 ,  H01S5/20 ,  H01S5/3095

摘要： Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.

摘要翻译： 提供了具有多量子阱（MQW）pin二极管结构的发光器件以及制造和使用这些器件的方法。 器件由多层半导体异质结构组成。 该器件包括一个或多个界面层材料，其允许电流在本征有源区与p型和/或n型掺杂电荷注入层之间的界面处穿过晶格失配的异质结而隧穿。

公开(公告)号：EP2928032A1

公开(公告)日：2015-10-07

申请号：EP15151326.4

申请日：2015-01-15

申请人： Mitsubishi Electric Corporation

发明人： Futami, Mitsuaki ,  Hasegawa, Yuki ,  Yoshihara, Toru ,  Yagyu, Shinji ,  Nishimura, Tetsuya

IPC分类号： H01S5/40 ,  H01S5/028

CPC分类号： H01S5/20 ,  H01S5/0014 ,  H01S5/0287 ,  H01S5/0288 ,  H01S5/4031

摘要： In a semiconductor laser array (1) of the present invention, a plurality of laser elements (first to fifth laser elements 20a, 20b, 20c, 20d, 20e) are disposed such that waveguides of the laser elements are parallel to one another, each of the plurality of laser elements includes a front-end-surface reflection film (5, 6) on a front end surface serving as a light emitting surface of the waveguide, each of the plurality of laser elements includes a rear-end-surface reflection film (7) on a rear end surface opposite to the front end surface with the waveguide sandwiched between the front end surface and the rear end surface, the front-end-surface reflection films (5, 6) of at least two of the plurality of laser elements have different reflectances, the rear-end-surface reflection films (7) of the plurality of laser elements have the same reflectance, and the plurality of laser elements are driven by a single power supply.

摘要翻译： 在本发明的半导体激光器阵列（1）中，多个激光元件（第一至第五激光元件20a，20b，20c，20d，20e）被配置成使得激光元件的波导彼此平行， 所述多个激光元件包括在作为所述波导管的发光面的前端面上的前端面反射膜（5,6），所述多个激光元件中的每一个包括后端面反射 薄膜（7）在与前端面相反的后端面上，波导夹在前端面与后端面之间，多个前端面反射膜（5,6）中的至少两个 的激光元件具有不同的反射率，多个激光元件的后端面反射膜（7）具有相同的反射率，并且多个激光元件由单个电源驱动。

公开(公告)号：EP2226858A3

公开(公告)日：2014-05-07

申请号：EP10155194.3

申请日：2010-03-02

申请人： Sumitomo Electric Industries, Ltd.

发明人： Enya, Yohei ,  Yoshizumi, Yusuke ,  Osada, Hideki ,  Ishibashi, Keiji ,  Akita, Katsushi ,  Ueno, Masaki

IPC分类号： H01L33/16 ,  H01L33/32 ,  H01L21/20 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/34333

摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle A OFF is 0.05 degree or more to less than 15 degrees. The angle A OFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane S M and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis A N of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.

公开(公告)号：EP1669799B1

公开(公告)日：2013-06-19

申请号：EP03748655.2

申请日：2003-10-01

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

发明人： KOYATA, Y., Mitsubishi Denki Kabushiki Kaisha ,  HIRANO, Y., Mitsubishi Denki Kabushiki Kaisha ,  IMAKI, Masao, Mitsubishi Denki Kabushiki Kaisha ,  TERAMOTO, K., Mitsubishi Denki Kabushiki Kaisha ,  SHIBUE, S., Mitsubishi Denki Kabushiki Kaisha

IPC分类号： G02F1/37

CPC分类号： H01S5/026 ,  G02F1/3775 ,  G02F2201/34 ,  G02F2201/346 ,  H01S3/08045 ,  H01S3/0815 ,  H01S3/082 ,  H01S3/109 ,  H01S5/065 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/141 ,  H01S5/20 ,  H01S5/2036

公开(公告)号：EP2337169A2

公开(公告)日：2011-06-22

申请号：EP11161727.0

申请日：2008-08-28

申请人： OSRAM Opto Semiconductors GmbH

发明人： Schmid, Wolfgang

IPC分类号： H01S5/16

CPC分类号： H01S5/20 ,  H01S5/0425 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/16 ,  H01S5/204

摘要： Bei einem kantenemittierenden Halbleiterlaser mit einer Laserstrahlung (13) erzeugenden aktiven Schicht (3), die in eine erste Wellenleiterschicht (1) eingebettet ist, wobei die erste Wellenleiterschicht (1) zwischen einer ersten Mantelschicht (4) und einer zweiten Mantelschicht (5) angeordnet ist und in lateraler Richtung durch Seitenfacetten (9) des Halbleiterlasers begrenzt wird, grenzt an die zweite Mantelschicht (5) eine zweite Wellenleiterschicht (2) an, in die keine aktive Schicht eingebettet ist, wobei an einer von der ersten Wellenleiterschicht (1)abgewandten Seite der zweiten Wellenleiterschicht (2) eine dritte Mantelschicht (6) angeordnet ist. Die erste Wellenleiterschicht (1) und die zweite Wellenleiterschicht (2) sind in ihrer gesamten lateralen Ausdehnung optisch aneinander gekoppelt.

摘要翻译： 该激光器具有产生激光辐射的有源层（3）并嵌入到波导层（1）中，其中波导层由两个部分层形成。 波导层布置在第一壳层和第二壳层之间，并且沿横向连接到激光器的侧斜面（9）。 另一个波导层（2）连接到第二壳层。 第三壳层（6）布置在后一个波导层的一侧，其中该侧离开前一个波导层。 波导层在横向延伸中彼此光学耦合。

公开(公告)号：EP2023454A3

公开(公告)日：2009-09-02

申请号：EP08014025.4

申请日：2008-08-05

申请人： Canon Kabushiki Kaisha

发明人： Nagatomo, Yasuhiro ,  Uchida, Takeshi

IPC分类号： H01S5/18 ,  H01S5/20 ,  H01S5/10 ,  H01S5/42

CPC分类号： H01S5/18 ,  H01S5/105 ,  H01S5/20 ,  H01S5/42 ,  H01S2301/14

摘要： In a structure having a two-dimensional photonic crystal in which structures (1010) having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction (1040) perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crsytal, wherein the structure comprises a one-dimensional photonic crystal (1030) in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal.

公开(公告)号：EP2023454A2

公开(公告)日：2009-02-11

申请号：EP08014025.4

申请日：2008-08-05

申请人： Canon Kabushiki Kaisha

发明人： Nagatamo, Yasuhiro ,  Uchida, Takeshi

IPC分类号： H01S5/18 ,  H01S5/20

CPC分类号： H01S5/18 ,  H01S5/105 ,  H01S5/20 ,  H01S5/42 ,  H01S2301/14

摘要： In a structure having a two-dimensional photonic crystal in which structures (1010) having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction (1040) perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crsytal, wherein the structure comprises a one-dimensional photonic crystal (1030) in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal.

摘要翻译： 在具有二维光子晶体的结构中，其中具有不同折射率的结构（1010）以二维周期设置，并且包括在垂直于在In中传播的光的谐振方向的方向（1040）发射的结构 二维光子晶体的平面方向，其中该结构包括一维光子晶体（1030），其中具有不同折射率的分量以一维周期排列，并且在平面内传播的光 二维光子晶体的方向被一维光子晶体的光子带边反射。

公开(公告)号：EP1258062B1

公开(公告)日：2007-05-23

申请号：EP01937136.8

申请日：2001-01-19

申请人： Trumpf Photonics, Inc.

发明人： GARBUZOV, Dimitri, Z. ,  KHALFIN, Viktor, B. ,  CONNOLLY, John, C.

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/34

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/3211 ,  H01S2301/18

摘要： A semiconductor diode laser has a characteristic output with a single mode vertical farfield divergence. The semiconductor diode laser includes a waveguide (103) with a first refractive index and a quantum well (104) embedded in the center of the waveguide. On one side of the waveguide (103) sits a p-type cladding layer (105) with a second refractive index smaller than the first refractive index. On the other side of the waveguide (103) sits an n-type cladding layer (102) with a third refractive index smaller than the first refractive index and larger than the second refractive index.

公开(公告)号：EP1380077A4

公开(公告)日：2005-12-07

申请号：EP01930425

申请日：2001-03-19

申请人： TRUMPF PHOTONICS INC ,  GARBUZOV DMITRI ZALMANOVITCH ,  MENNA RAYMOND J

发明人： GARBUZOV DMITRI ZALMANOVITCH ,  MENNA RAYMOND J

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L33/0045 ,  H01L33/04 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/34306 ,  H01S2301/18

摘要： A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see Fig. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.

摘要翻译： 一种提高了效率，在光电器件，颜色的方法：诸如半导体激光器，超发光发光二极管（的SLD），增益芯片，光学放大器是游离缺失光盘，参见图4B。 在符合本发明的原理的雅舞蹈，至少一个阻挡层（70）在构成该器件的材料之间的界面插入。 所述至少一个阻挡层带来了障碍确实防止电子的泄漏从包含在所述波导区的器件有源区，到设备包层区域（66）。 在本发明的一个方面，阻挡层（70），在具有不同类型导电性的半导体材料的接合处形成。 所述阻挡层从输入不同的极性的材料防止电子。 在本发明的另一个方面，一个低掺杂或未掺杂区域（64）被定位成邻近所述阻挡层（70）以减少光损耗。

公开(公告)号：EP1586148A2

公开(公告)日：2005-10-19

申请号：EP04704931.7

申请日：2004-01-23

申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY

发明人： YARIV, Amnon

IPC分类号： H01S5/125 ,  H01S5/187 ,  G02B6/10 ,  G02B6/20

CPC分类号： H01S5/20 ,  H01S5/105 ,  H01S5/12 ,  H01S5/2004 ,  H01S5/2235 ,  H01S5/50

摘要： A transverse Bragg resonance waveguide (14) is comprised of a waveguiding channel (22), and on at least two opposing sides of the channel two periodic index media (24); and a means for providing gain in the periodic index media. In one embodiment the waveguiding channel is planar and is sandwiched on two opposing sides by the periodic index media. In another embodiment the waveguiding channel is cylindrical and is surrounded by the periodic index media. The means for providing gain in the periodic index media is electrical or optical pumping. The periodic index media comprises a periodic lattice (18) of regions having an index of refraction distinct from the channel, such as an array of transverse holes (16) defined in a planar semiconductor substrate in which the channel is also defined, or an array of longitudinal holes defined in a cylindrical semiconductor fiber in which the channel is also longitudinally defined.