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公开(公告)号：EP0787357A1
公开(公告)日：1997-08-06
申请号：EP95934599.0
申请日：1995-10-11
IPC分类号： H01L29
CPC分类号： H01L29/7722
摘要： The invention concerns a permeable base transistor with a gate which is surrounded by semiconductive material and which comprises perpendicular openings filled with semiconductive material in order to form perpendicular flow ducts. The object of the invention is to provide a PBT which does not require an additional epitaxial layer to prevent filament misalignment above the gate. This object is achieved by a PBT which comprises, at least on one of the two lateral gate boundary layers, an additional layer made of the oxide of the semiconductive material. A PBT is consequently obtained which has a planar surface and does not require any epitaxy. Additionally the gate source capacity is reduced.
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公开(公告)号：EP0693224A1
公开(公告)日：1996-01-24
申请号：EP94911106.0
申请日：1994-04-02
CPC分类号： H01L33/40 , B82Y10/00 , H01L33/14 , H01L33/346 , H01L33/38
摘要： A layered system with an electrically activatable layer has at least one contact electrode which extends over at least part of the surface of the first side of the layer and is connected thereto. The object of the invention is to create a layered system of this type in which the electrically activatable lateral layer is controllable to a limited extent. For that purpose, a plurality of transistor functions is provided on the second side of the electrically activatable layer at least in the area of the first contact electrode. One end of the current channels which supply the controllable current to the corresponding transistor functions is connected to the layer. It is advantageous that the transistor function extends over an as wide as possible part of said layer surface, so as to even completely cover said first side of the layer.
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