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公开(公告)号:EP3796556A1
公开(公告)日:2021-03-24
申请号:EP19306124.9
申请日:2019-09-18
申请人: FREC|N|SYS
摘要: A transducer structure (200) for an acoustic device comprising a piezoelectric layer (212), a pair of inter-digitated comb electrodes (206, 208), comprising a plurality of electrode means (206-1, 206-2, ..., 208-1, 208-2, ...) with a pitch p satisfying the Bragg condition given by p= lambda/2, lambda being the operating acoustic wavelength of said transducer, characterized in that the inter-digitated comb electrodes are embedded in the piezoelectric layer (212) said pair of inter-digitated comb electrodes comprises neighbouring electrode means belonging to different comb electrodes wherein the electrode means all have the same geometry; and wherein said pair of inter-digitated comb electrodes comprises one region (218) or more regions (218) in which two or more neighbouring electrode means (208-4, 208-5) belong to the same comb electrode while having an edge-to-edge distance to each other corresponding to the pitch p and having the same geometry such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The invention relates also to a acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating said transducer structure. The invention relates also to the use of the frequency of the bulk wave propagating in the electrode means of said transducer structure in an acoustic wave device to generate contribution at high frequency, in particular above 3GHz.
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公开(公告)号:EP3948195A1
公开(公告)日:2022-02-09
申请号:EP20710982.8
申请日:2020-03-19
申请人: FREC|N|SYS
IPC分类号: G01L1/16
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5.
公开(公告)号:EP3602677A1
公开(公告)日:2020-02-05
申请号:EP18720777.4
申请日:2018-03-29
申请人: FREC|N|SYS
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公开(公告)号:EP3766011A1
公开(公告)日:2021-01-20
申请号:EP19710688.3
申请日:2019-03-14
申请人: FREC|N|SYS
IPC分类号: G06K19/067
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公开(公告)号:EP3599720A1
公开(公告)日:2020-01-29
申请号:EP18306023.5
申请日:2018-07-27
申请人: FREC|N|SYS
摘要: The invention relates to a coupled cavity filter structure, using a surface acoustic wave, in particular a guided surface acoustic wave, comprising an acoustic wave propagating substrate (102), at least one input transducer structure (112) and one output transducer structure (114), provided over the substrate (102), each comprising inter-digitated comb electrodes (124, 126), one reflecting structure (116), said reflecting structure (116) comprising at least one or more metallic strips (114), positioned at a distance and in between the input and output transducer structures (112, 114), in the direction of propagation of an acoustic wave, characterised in that the acoustic wave propagation substrate (102) is a composite substrate comprising a base substrate (106) and a piezoelectric layer (104).
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公开(公告)号:EP3796555A1
公开(公告)日:2021-03-24
申请号:EP19306123.1
申请日:2019-09-18
申请人: FREC|N|SYS
摘要: A transducer structure (100) for an acoustic device comprising a piezoelectric layer (104), a pair of inter-digitated comb electrodes (108, 110), comprising a plurality of electrode means (112_1, 112_2, 112_3, 112_4, 114_1, 114_2, 114_3, 114_4) with a pitch p satisfying the Bragg condition given by p= lambda/2, lambda being the operating acoustic wavelength of said transducer, characterized in that the inter-digitated comb electrodes (108, 110) are embedded in the piezoelectric layer (104) and the acoustic impedance of the electrode means is less than the acoustic impedance of the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The invention relates also to a acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating said transducer structure. The invention relates also to the use of the frequency of the bulk wave propagating in the electrode means of said transducer structure in an acoustic wave device to generate contribution at high frequency, in particular above 3GHz.
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